SMD LED
Product Data Sheet
LTST-S110KFKT
Spec No.: DS22-2003-084
Effective Date: 09/01/2006
Revision: C
LITE-ON DCC
RELEASE
BNS-OD-FC001/A4
LITE-ON Technology Corp. / Optoelectronics
No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660
http://www.liteon.com/opto
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Features
* Meet ROHS, Green Product.
* Side Looking Special For LCD Backlight.
* Ultra Bright AlInGaP Chip LED.
* Package In 8mm Tape On 7" Diameter Reels.
* EIA STD package.
* I.C. compatible.
* Compatible With Automatic Placement Equipment.
* Compatible With Infrared And Vapor Phase Reflow Solder Process.
Package
Dimensions
Part No.
LTST-S110KFKT
Notes:
1. All dimensions are in millimeters (inches).
Lens
Water Clear
Source Color
AlInGaP Orange
2. Tolerance is ± 0.10 mm (.004") unless otherwise noted.
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Absolute
Maximum
Ratings
At
Ta=25
℃
LTST-S110KFKT
75
Parameter
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
DC Forward Current
Derating Linear From 50°C
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Wave Soldering Condition
Infrared Soldering Condition
Vapor Phase Soldering Condition
Unit
mW
80
mA
30
0.4
5
-55°C to + 85°C
-55°C to + 85°C
260°C For 5 Seconds
260°C For 5 Seconds
215°C For 3 Minutes
mA
mA/°C
V
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Suggestion Profile:
(1) Suggestion IR Reflow Profile For Normal Process
(2) Suggestion IR Reflow Profile For Pb Free Process
R e c o m m e n d e d P r o file B e t w e e n A s s e m b le A n d H e a t -R e s is t a n c e L in e
T h e P r o file is a v a ila b le t h a t m u s t t o u s e S n A g
Cu
s o ld e r p a s t e
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BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Electrical
Optical
Characteristics
Symbol
At
Ta=25
℃
Min.
Typ.
Max.
Unit
Test Condition
IF = 20mA
Note 1
Parameter
Part No.
LTST-
Luminous Intensity
IV
S110KFKT
45.0
90.0
mcd
Viewing Angle
2θ1/2
S110KFKT
130
deg
Note 2 (Fig.6)
Peak Emission Wavelength
λP
S110KFKT
611
nm
Measurement
@Peak (Fig.1)
Dominant Wavelength
λd
S110KFKT
605
nm
Note 3
Spectral Line Half-Width
Δλ
S110KFKT
17
nm
Forward Voltage
VF
S110KFKT
2.0
2.4
V
IF = 20mA
Reverse Current
IR
S110KFKT
10
μA
VR = 5V
Capacitance
C
S110KFKT
40
PF
VF = 0
f = 1MHZ
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2.
θ1/2
is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength,
λd
is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
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BNS-OD-C131/A4
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