JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
M28S
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High DC Current Gain and Large Current Capability
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbo
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
6
1
0.625
200
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Test
conditions
Min
40
20
6
1
5
0.1
290
300
300
300
0.55
100
V
MHz
1000
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= 0.1mA ,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=40V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
=5V,I
C
=0
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=100mA
V
CE
=10V, I
C
=300mA
V
CE
=1V, I
C
=500mA
I
C
=600mA,I
B
=20mA
V
CE
=10V,I
E
=50mA ,f=30MHz
CLASSIFICATION OF h
FE(2)
RANK
RANGE
B
300-550
C
500-700
D
650-1000
A,Dec,2010
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