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M4

直流反向耐压(Vr):400V 平均整流电流(Io):1A 正向压降(Vf):1.1V @ 1A

器件类别:分立半导体    通用二极管   

厂商名称:合科泰(Hottech)

厂商官网:http://www.heketai.com

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器件参数
参数名称
属性值
直流反向耐压(Vr)
400V
平均整流电流(Io)
1A
正向压降(Vf)
1.1V @ 1A
文档预览
Plastic-Encapsulate Diodes
1.0 AMP. Surface Mount Rectifiers
M1---M7
FEATURES
For surface mounted application
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0 260
o
C / 10 seconds at terminals
7
4.50
52
0
32
MECHANICAL DATA
Case: Molded plastic
DO-214AC
Terminals: Pure tin plated, lead free
solderable per J-STD-002B and JESD22-B102D.
Polarity: Indicated by cathode band
Packaging: 12mm tapeper EIA STD RS-481
Weight: 0.064 gram
MAXIMUM RATINGS
AND
ELECTRICAL CHARACTERISTICS
DO-214AC (SMA)
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
TL =100
O
C
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method) Instantaneous Forward Voltage at 1 A
Maximum
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance 1)
Maximum Thermal Resistance 2)
Operating and Storage Temperature Range
1) Measured at 1MHz and applied reverse voltage of 4 V
2) 8 mm2 (0.013 mm thick) land areas
Symbols
VRRM
VRMS
VDC
I(A)
M1
50
35
50
M2
100
70
100
M3
200
140
200
M4
400
280
400
1
M5
600
420
600
M6
800
560
800
M7
1000
700
1000
Unit
V
V
V
A
IFSM
VF
IR
CJ
R
θJL
TJ, TS
30
1.1
5
200
15
30
- 50 to + 150
O
A
V
µA
pF
C/W
O
TA = 25
O
C
TA = 125 C
O
C
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Diodes
M1---M7
Typical Characteristics
30
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
2.0
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
25
20
15
10
5
8.3ms Single Half Sine Wave
(JEDEC Method)
1.0
25 50 75 100 125 150175
LEAD TEMPERATURE .
o
C
Fig. 1-FORWARD CURRENT
DERATING CURVE
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,
MICROAMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
10
1
0.1
0.01
0.001
0
20
40
60
80 100 120 140
T
j
=125
o
C
T
j
=75
o
C
T
j
=25
o
C
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD
VOLTAGE , VOLTS
Fig. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
PERCENT OF PEAK REVERSE VOLTAGE, %
Fig. 3-TYPICAL REVERSE
CHARACTERISTICS
1000
THERMAL IMPEDANCE (oC/W)
500
200
100
50
20
10
5
2
1
CAPACITANCE. pF
Units Mounted On
20in
2
(5.4mm
2
)+0.5mil
inches(0.013mm)
Thick Copper Land Areas
100
50
20
10
5
2
1
T
j
=25
o
C
f=1.0MHz
Vsig=50mVp-p
0
1.0
10
100
1000
0.01
0.1
1
10
100
REVERSE VOLTAGE VOLTS
Fig. 6-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE VOLTS
Fig. 5-TRANSIENT THERMAL IMPEDANCE
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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