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MB10S

反向峰值电压:1000V 平均整流电流(Io):500mA 正向压降(Vf):1V @ 500mA .

器件类别:分立半导体    整流桥   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件:MB10S

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器件参数
参数名称
属性值
反向峰值电压
1000V
平均整流电流(Io)
500mA
正向压降(Vf)
1V @ 500mA
文档预览
MB05S THRU MB10S
Voltage Range -
50
to 1000 V olts
Current -
0.8
Ampere
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Features
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
High temperature soldering guaranteed: 260°/10 seconds at 5
lbs., (2.3kg) tension
Small size, simple installation
High surge current capability
.083(2.12)
.043(1.10)
.014(0.35)
.006(0.15)
.043(1.10)
.028(0.70)
.053(1.53)
.037(0.95)
MBS
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.157(4.00)
.142(3.60)
.102(2.60)
.087(2.20)
Mechanical Data
Case
: JEDEC
MBS
Molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity
: Polarity symbol marking on body
Mounting Position
: Any
Weight
: 0.0035 ounce, 0.1 grams
(2)
-
.106(2.70)
.090(2.30)
.008(0.20)
MAX
.118(3.0)
MAX
(3)
~
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
MB05S MB1S MB2S MB4S MB6S MB8S MB10S
MDD
MDD
MDD
MDD
MDD
MDD MDD
MB05S MB1S MB2S MB4S MB6S MB8S MB10S
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
200
400
600
800
1000
50
100
0.8
UNITS
V
V
V
A
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=125°C
Peak forward surge current,
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward
at
=0.4A
voltage drop
per leg
at
=0.8A
Maximum DC reverse current
T
A
=25
at rated DC blocking voltage
T
A
=125
Typical junction capacitance
Typical thermal resistance
Operating temperature range
storage temperature range
(N
ote
1)
(N
ote
2)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
1.0
1.1
5
40
13
90
32
-55 to +150
-55 to +150
V
F
I
R
C
J
R
θJA
R
θJC
T
J
T
STG
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad.
DN:T19C28A0
http://www.microdiode.com
Rev:2019A0
Page :1
+
.276(7.0)
MAX
(1)
+
(4)
~
A
V
uA
uA
PF
°C/W
°C
°C
MB05S THRU MB10S
Voltage Range -
50
to 1000 V olts
Current -
0.8
Ampere
Ratings And Characteristic Curves
Fig.1 Average Rectified Output Current
Derating Curve
Average Rectified Output Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current(
μ
A)
100
T
J
=125°C
10
1.0
T
J
=25°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance (pF)
10
100
T
J
=25°C
Fig.4 Typical Junction Capacitance
T
J
=25°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
The curve above is for reference only.
http://www.microdiode.com
Rev:2019A0
Page :2
MB05S THRU MB10S
Voltage Range -
50
to 1000 V olts
Current -
0.8
Ampere
Suggested Pad Layout
6.0
236
0.9
35
2.5
100
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
2.4
94
mm
Unit
(mil)
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
http://www.microdiode.com
Rev:2019A0
Page :3
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