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MBR10100LCT

器件类别:分立半导体    肖特基二极管   

厂商名称:平伟(PINGWEI)

厂商官网:http://www.perfectway.cn

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MBR1045L(F,B,H)CT thru MBR10200L(F,B,H)CT
10A Schottky Barrier Rectifier
FEATURE
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High ESD capability
High temperature soldering guaranteed:
260°
C/10s/0.25"(6.35mm) from case
TO-220AB
MBR10XXLCT
ITO-220AB
MBR10XXLFCT
MECHANICAL DATA
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Mounting position: any
TO-263
MBR10XXLBCT
TO-262
MBR10XXLHCT
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
Ratings at 25° ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
C
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified total device
Current at
T
C
=90°
C
per diode
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
Storage Temperature Range
Operation Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
STG
T
J
700
-55 to +150
-55 to +150
MBR1045 MBR1060 MBR10100 MBR10150 MBR10200
units
LCT
LCT
LCT
LCT
LCT
45
32
60
42
100
70
10.0
5.0
120
300
150
105
200
140
V
V
V
A
A
pF
°
C
°
C
ELECTRONICAL CHARACTERISTICS
Parameter
Maximum Forward Voltage Drop per diode at 5A (Note 2)
@
T
C
=25°
C
Maximum DC Reverse Current at rated
DC blocking voltage (Note 2)
@
T
C
=100°
C
Symbol
V
F
I
R
MBR1045 MBR1060 MBR10100 MBR10150 MBR10200
units
LCT
LCT
LCT
LCT
LCT
0.55
0.15
40.0
0.65
0.80
0.85
0.1
20.0
0.90
V
mA
THERMAL CHARACTERISTICS
Parameter
Typical Thermal Resistance (Note 3)
Symbol
R
th (JC)
ITO-220
3.5
TO-220
2.5
TO-262
TO-263
2.5
units
°
C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
-
页码
-
Rev. 14-1
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