JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR10200CT
SCHOTTKY BARRIER RECTIFIER
TO-220-3L
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
140
10
120
2
50
125
-55~+150
200
Value
1. ANODE
2. CATHODE
3. ANODE
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
*Pulse test
Symbol
V
(BR)
I
R
V
F(1)
V
F(2)
*
C
tot
I
R
=100μA
V
R
=200V
I
F
=5A
I
F
=10A
V
R
=4V,f=1MHz
300
Test conditions
Min
200
5
0.84
0.95
Typ
Max
Unit
V
μA
V
V
pF
A,Nov,2010
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