JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
MBR1030,35,40,45,50
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge
I
FSM
current
8.3ms half sine wave
P
D
R
ΘJA
T
j
T
stg
Power dissipation
Thermal resistance from junction to
ambient
Junction temperature
Storage temperature
2
50
125
-55~+150
W
℃/W
℃
℃
150
A
21
24.5
28
10
31.5
35
V
A
30
35
40
45
50
V
MBR1030
MBR1035
MBR1040
MBR1045
MBR1050
Unit
TO-220A
1. CATHODE
2. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR1030
MBR1035
Reverse voltage
V
(BR)
MBR1040
MBR1045
MBR1050
MBR1030
MBR1035
Reverse current
I
R
MBR1040
MBR1045
MBR1050
Forward voltage
Typical junction capacitance
V
F
C
j
MBR1030-45
MBR1050
MBR1030-50
V
R
=4V,f=1MHz
400
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
I
F
=10A
0.84
0.95
pF
V
0.1
mA
I
R
=1mA
Test conditions
Min
30
35
40
45
50
V
Typ
Max
Unit
A,Nov,2010
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