JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR1030CT, 35CT, 40CT, 45CT, 50CT, 60CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
MBR
1030CT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T
c
=105℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
28
10
125
2
50
125
-55~+150
31.5
35
42
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
60
V
MBR
1035CT
MBR
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT
Unit
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR1030CT
MBR1035CT
Reverse voltage
V
(BR)
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
MBR1030CT
MBR1035CT
Reverse current
I
R
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
V
F(1)
Forward voltage
V
F(2)
*
Typical total capacitance
*Pulse test
C
tot
MBR1030CT-1045CT
MBR1050CT,1060CT
MBR1030CT-1045CT
MBR1050CT,1060CT
MBR1030CT-1060CT
I
F
=10A
V
R
=4V,f=1MHz
150
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
V
R
=60V
I
F
=5A
0.7
0.8
0.84
0.95
pF
V
0.1
mA
I
R
=0.1mA
Test conditions
Min
30
35
40
45
50
60
V
Typ
Max
Unit
A,Nov,2010
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