JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR1070CT, 80CT, 90CT, 100CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
MBR
1070CT
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T
c
=100℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
49
56
10
120
2
50
125
-55~+150
63
70
V
A
A
W
℃/W
℃
℃
70
80
90
100
V
MBR
1080CT
MBR
1090CT
MBR
10100CT
Unit
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR1070CT
Reverse voltage
MBR1080CT
V
(BR)
MBR1090CT
MBR10100CT
MBR1070CT
Reverse current
I
R
MBR1080CT
MBR1090CT
MBR10100CT
Forward voltage
Typical total capacitance
*Pulse test
V
F(1)
V
F(2)
*
C
tot
MBR1070CT-10100CT
MBR1070CT-10100CT
MBR1070CT-10100CT
V
R
=70V
V
R
=80V
V
R
=90V
V
R
=100V
I
F
=5A
I
F
=10A
V
R
=4V,f=1MHz
300
0.85
0.95
pF
V
0.1
mA
I
R
=0.1mA
Test conditions
Min
70
80
90
100
V
Typ
Max
Unit
A,Nov,2010
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