JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR1060, 70, 80, 90, 100FCT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
MBR10
60FCT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
42
49
10
120
2
50
125
-55~+150
56
63
70
V
A
A
W
℃/W
℃
℃
60
70
80
90
100
V
MBR10
70FCT
MBR10
80FCT
MBR10
90FCT
MBR10
100FCT
Unit
TO-220F
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR1060FCT
MBR1070FCT
Reverse voltage
V
(BR)
MBR1080FCT
MBR1090FCT
MBR10100FCT
MBR1060FCT
MBR1070FCT
Reverse current
I
R
MBR1080FCT
MBR1090FCT
MBR10100FCT
Forward voltage
V
F(1)
V
F(2)
Typical total capacitance
C
tot
MBR1070-100FCT
MBR1060FCT
MBR1070-100FCT
MBR1060-100FCT
MBR1060FCT
V
R
=4V,f=1MHz
300
V
R
=60V
V
R
=70V
V
R
=80V
V
R
=90V
V
R
=100V
I
F
=5A
I
F
=10A
150
pF
0.8
0.85
0.95
V
0.1
mA
I
R
=0.1mA
Test conditions
Min
60
70
80
90
100
V
Typ
Max
Unit
A,Nov,2010
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