JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
70
105
20
150
2
50
125
-55~+150
140
V
A
A
W
℃/W
℃
℃
100
150
200
V
Value
MBR20100FCT
MBR20150FCT
MBR20200FCT
Unit
TO-220F
1. ANODE
2. CATHODE
3. ANODE
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR20100FCT
Reverse voltage
V
(BR)
MBR20150FCT
MBR20200FCT
MBR20100FCT
Reverse current
I
R
MBR20150FCT
MBR20200FCT
MBR20100FCT
Forward voltage
V
F
C
tot
MBR20150FCT
MBR20200FCT
Typical total capacitance
MBR20100FCT- 20200FCT
V
R
=5V,f=1MHz
1000
I
F
=10A
V
R
=100V
V
R
=150V
V
R
=200V
I
R
=1mA
Test conditions
Min
100
150
200
0.15
0.1
0.1
0.85
0.9
0.9
pF
V
mA
V
Typ
Max
Unit
A,Nov,2010
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