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MBR2060CT

直流反向耐压(Vr):60V 平均整流电流(Io):20A 正向压降(Vf):750mV @ 10A 60V,20A,VF=750mV@10A

器件类别:分立半导体    肖特基二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件:MBR2060CT

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器件参数
参数名称
属性值
直流反向耐压(Vr)
60V
平均整流电流(Io)
20A
正向压降(Vf)
750mV @ 10A
文档预览
MBR2020CT THRU MBR20100CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 20.0 Amperes
TO-220AB
0.415(10.54)
MAX
0.154(3.91)
DIA
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.057(1.45)
0.051(1.30)
0.113(2.87)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.410(10.41)
0.390(9.91)
PIN
1
2
3
0.160 (4.05)
0.140 (3.55)
0.635(16.13)
0.625(15.87)
0.350(8.89)
0.330(8.38)
1.148(29.16)
1.118(28.40)
0.590(14.22)
0.530(13.46)
0.037(0.94)
0.027(0.68)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.560(14.2)
0.530(13.4)
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C,0.25
(6.35mm) from case for 10 seconds
0.110(2.79)
0.100(2.54)
MECHANICAL DATA
Case:
TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:0.08
ounce, 2.24 grams
0.105 (2.67)
0.095 (2.41)
0.022(0.58)
0.014(0.35)
PIN 2
CASE
PIN 1
PIN 3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at Tc(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
MBR MBR MBR MBR MBR MBR MBR MBR MBR
SYMBOLS
MBR
2030CT 2040CT 2045CT 2050CT 2060CT 2070CT 2080CT 2090CT 20100CT
2020CT
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
45
32
45
50
35
50
60
42
60
20.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
T
STG
0.55
15.0
550
150.0
0.75
1.0
50.0
450
2.0
-50 to +125
-50 to +150
-50 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES MBR2020CT THRU MBR20100CT
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
20
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
16
125
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
12
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
100
8
75
4
MBR2020CT-MBR2045CT
MBR2050CT-MBR20100CT
0
0
25
50
75
100
125
150
175
50
25
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10
10
TJ=100 C
1
1
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
TJ=75 C
0.1
0.1
MBR2020CT-MBR2045CT
MBR2050CT-MBR2060CT
MBR2070CT-MBR20100CT
0.01
TJ=25 C
0.01
0.2
0.4
0.6
0.8
1.0
1.1
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
2000
1000
T
J
=25 C
10
100
1
MBR2020CT-MBR2045CT
MBR2050CT-MBR20100CT
10
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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