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MBR25150FCT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.9 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
200 A
元件数量
2
相数
1
端子数量
3
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
150 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MBR2540FCT~MBR25200FCT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
25 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANCEAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage Forward C urrent (S ee fi g.1)
P eak F orward Surge C urrent : 8.3ms si ngle half si ne-
wave superi mposed on rated load (JED E C method)
Maxi mum F orward Voltage at 12.5A, per leg
Maxi mum D C Reverse C urrent T
J
=25
O
C
at Rated D C Bloc ki ng Voltage T
J
=125
O
C
Typi cal Thermal Res i stanc e
Operati ng Juncti on and Storage Tempe rature Range
S YMB OL
V
RRM
V
RMS
V
DC
I
F(AV )
I
FS M
V
F
I
R
R
θJC
T
J
,T
S TG
MB R254 0FC T MB R2545 FC T MB R2550 FC T MB R2560 FC T MB R2580 FC T MB R2590 FC T MB R2 5100 FC T MB R2515 0FC T MB R2520 0FC T
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
25
200
90
63
90
100
70
100
150
105
150
200
140
200
0.7
0.75
0.05
20
2
0.8
0.9
V
mA
O
C /W
O
-50 to + 150
-65 to +175
C
NOTES:
Both Bonding and Chip structure are available.
December 28,2011-REV.03
PAGE . 1
MBR2540FCT~MBR25200FCT
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
PEAK FORWARD SURGE CURRENT,
Amps
25.0
20.0
15.0
10.0
5.0
0
0
20
40
60
80
100
120
O
= 40V
= 45-200V
240
210
180
150
120
90
60
30
0
1
2
5
10
20
50
100
8.3ms Single
Half Since-Wave
JEDEC Method
RESISTIVE OR
INDUCTIVE LOAD
140
160
180
CASE TEMPERATURE, C
NO. OF CYCLE AT 60Hz
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE
CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
40
40-45V
TC=125
O
C
1.0
FORWARD CURRENT, Amps
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
50-60V
80-100V
150-200V
0.1
TC=75
O
C
0.01
TC=25
O
C
T
J
= 25 C
Pulse Width = 300 us
1% Duty Cycle
O
0 .001
20
40
60
80
100
.4
.5
.6
.7
.8
0.9
1.0
1 .1
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
December 28,2011-REV.03
PAGE . 2
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