JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR3030CT, 35CT, 40CT, 45CT, 50CT, 60CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
MBR
3030CT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T
c
=100℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
28
30
200
2
50
125
-55~+150
31.5
35
42
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
60
V
MBR
3035CT
MBR
3040CT
MBR
3045CT
MBR
3050CT
MBR
3060CT
Unit
TO-220-3L
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
MBR3030CT
MBR3035CT
Reverse voltage
V
(BR)
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
MBR3030CT
MBR3035CT
Reverse current
I
R
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
MBR3030CT-3045
Forward voltage
Typical total capacitance
V
F
*
CT
MBR3050CT,3060
C
tot
MBR3030CT-3045
MBR3050CT,3060
V
R
=4V,f=1MHz
450
400
I
F
=30A
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
V
R
=60V
0.84
0.95
pF
V
0.2
mA
I
R
=1mA
Test conditions
Min
30
35
40
45
50
60
V
Typ
Max
Unit
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
A,Nov,2010
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