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MBR3045FCT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
275 A
元件数量
2
相数
1
端子数量
3
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
30 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
45 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
MBR3040FCT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
40 to 200 Volts
CURRENT
30 Amperes
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.272(6.9)
0.248(6.3)
• Plastic package has Underwriters Laboratory
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAME TE R
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blocki ng Voltage
Maxi mum Average Forward C urrent
Peak F orward S urge C urrent :8.3ms si ngle
half si ne-wave superi mposed on rated load
(JED E C method)
Maxi mum Forward Voltage at 15A per leg
Maxi mum D C Reverse C urrent
at Rated D C Blocki ng Voltage
Typi cal Thermal Resi stance
Operati ng Juncti on and
StorageTemperature Range
T
J
=25
O
C
T
J
=125
O
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F SM
V
F
I
R
R
JC
T
J
,T
S TG
MBR3 04 0F C T MB R30 45 FC T MB R3 05 0F C T MB R3 06 0F C T MB R3 08 0F C T MB R30 90 FC T MB R30 10 0F C T MB R30 15 0F C T MBR3 02 00 FC T
UNITS
V
V
V
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
30
90
63
90
100
70
100
150
105
150
200
140
200
275
A
0.7
0.75
0.1
20
1.4
0.8
0.05
20
0.9
V
mA
O
C /W
O
-5 5 to + 15 0
-65 to + 175
C
Note :
Both Bonding and Chip structure are available.
August 30,2010-REV.02
PAGE . 1
MBR3040FCT SERIES
RATING AND CHARACTERISTIC CURVES
275
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
40
30
20
10
0
40V
45-200V
PEAK FORWARD SURGE CURRENT,
AMPERES
50
250
225
200
175
150
125
100
75
50
25
0
1
2
5
10
20
50
100
RESISTIVE OR
INDUCTIVE LOAD
0
20
40
60
80
100
120
140
160
180
LEAD TEMPERATURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
O
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
TC=125
O
C
1.0
INSTANTANEOUS FORWARD CURRENT,
AMPERES
40
10
8
6
4
2
1.0
0.8
0.6
0.4
0.2
0 .1
0.1
TC=75
O
C
0.01
TC=25 C
O
40-45V
50-60V
80-100V
150-200V
0 .001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
20
40
60
80
100
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
August 30,2010-REV.02
PAGE . 2
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