• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.142(3.6)
.125(3.2)
CURRENT
60 Amperes
TO-3P
Unit: inch (mm)
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
.087(2.2)
.070(1.8)
.600(15.25)
.580(14.75)
.839(21.3)
.819(20.8)
.095(2.4)
.798(20.25)
.777(19.75)
.170(4.3)
.145(3.7)
.030(0.75)
.017(0.45)
MECHANICALDATA
Case: TO-3P molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.2 ounces, 5.6 grams.
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
AC
Positive CT
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e f i g . 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 0 A , p e r l e g
M a x i m u m D C R e v e r s e C u r r e n t
Tc
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
c
= 1 2 5
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L M B R 6 0 2 0 P T M B R 6 0 3 0 P T M B R 6 0 4 0 P T M B R 6 0 4 5 P T M B R 6 0 5 0 P T M B R 6 0 6 0 P T M B R 6 0 8 0 P T M B R 6 0 1 0 0 P T U N I T S
电子工程世界
