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MBR880CT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
R-PSFM-T3
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
3
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
80 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
MBR840CT~MBR8200CT
SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
.058(1.47)
40 to 200 Volts
CURRENT
8 Ampere
• In compliance with EU RoHS 2002/95/EC directives
.042(1.07)
MECHANICALDATA
• Case: TO-220AB molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 4 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S TG
MB R8 4 0 C T MB R8 4 5 C T MB R8 5 0 C T MB R8 6 0 C T MB R8 8 0 C T MB R8 9 0 C T MB R8 1 0 0 C T MB R8 1 5 0 C T MB R8 2 0 0 C T
U N IT S
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
8
150
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 5
0 .0 5
20
3
0 .8 0
0.90
V
mA
O
C / W
O
-5 5 to +1 5 0
-6 5 to +1 7 5
C
NOTES : Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
MBR840CT~MBR8200CT
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD RECTIFIED
CURRENT AMPERES
PEAK FORWARD SURGE CURRENT
AMPERES
10.0
8.0
6.0
4.0
2.0
0
0
20
40
60
80
100
120
O
150
= 40V
= 45-200V
120
110
90
70
50
30
20
10
1
2
5
10
8.3ms Single
Half Since-Wave
JEDEC Method
140
160
180
CASE TEMPERATURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
20
50
100
NO. OF CYCLE AT 60Hz
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
40
1.0
T
J
=100 C
O
INSTANTANEOUS FORWARD CURRENT
AMPERES
40V~45V
T
J
=
75 C
O
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.5
.6
.7
.8
.9
50V~60V
80V~100V
0.1
T
J
=
25
O
C
150V~200V
.01
.001
0
20
40
60
80
100 120
140
1.0
1.1
1.2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
STAD-APR.30.2009
PAGE . 2
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