JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Thyristors
SOT-89-3L
MCR100- 6,- 8
FEATURES
Silicon Controlled Rectifier
1.KATHODE
2.ANODE
Current-I
GT
: 200
µ
A
I
TRMS
: 0.8 A
3.GATE
V
RRM
/ V
DRM
: MCR100-6: 400 V
MCR100-8: 600 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified）
Parameter
On state voltage
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Peak forward or reverse blocking
Current
Holding current
Symbol
V
TM
*
V
GT
Test
I
TM
=1A
V
AK
=7V
conditions
Min
Max
1.7
0.8
Unit
V
V
V
DRM
AND
I
DRM
= 10 µA
V
RRM
I
DRM
I
RRM
I
H
A2
A1
V
AK
= Rated
V
DRM
or V
RRM
I
HL
= 20mA ,V
AK
= 7 V
400
600
10
V
µA
5
5
15
15
30
mA
µA
µA
Gate trigger current
I
GT
A
V
AK
=7V
30
80
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
B,May,2013
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