MD75S18M4
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
75 A
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
+
~
~
~
-
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
Module Type
TYPE
MD75S08M4
MD75S12M4
MD75S16M4
MD75S18M4
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Three phase, full wave Tc=110℃
I
D
t=10mS Tvj =45℃
I
FSM
t=10mS Tvj =45℃
i
2
t
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
To terminals(M5)
To heatsink(M5)
Values
75
750
2800
3000
-40 to +150
-40 to +125
5±15%
5±15%
146
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
g
Weight
Module (Approximately)
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Per diode
Conditions
Values
1.1
0.07
Units
℃/W
℃/W
Module (Approximately)
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=150A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Conditions
Values
Min.
－
－
Typ.
1.38
－
Max.
1.50
0.3
5
Units
V
mA
mA
Document Number: S-M0026
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MD75S18M4
Performance Curves
200
A
150
170
W
100
85
typ.
50
max.
I
F
0
0
V
F
0.5
1.0
1.5
V 2.0
25℃
- - -125℃
P
vtot
0
0 I
D
40
A 80
Fig1. Forward Characteristics
1.5
℃/
W
Z
th(j-
C
)
1500
Fig2. Power dissipation
50HZ
A
1.0
1000
0.5
500
0
0.001
0.01
0.1
1.0
10
S 100
0
1
10
cycles 100
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
100
A
80
60
40
20
I
D
0
0
Tc
50
100
℃
150
Fig5.Forward Current Derating Curve
Document Number: S-M0026
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MD75S18M4
Package Outline Information
CASE：
M4
Dimensions in mm
Document Number: S-M0026
Rev.1.0, May.31, 2013
www.apt-semi.com
3
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