HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
Ver 01
HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
General Description：
ME8100 Series
is a high performance
green-energy offline power supply controller. It
features a scalable driver for driving external NPN
or MOSFET transistors for line voltage switching.
This proprietary architecture enables many
advanced features to be integrated into a small
package (TO-92 ), resulting in lowest total cost
solution.
The ME8100 design has 6 internal terminals
and is a pulse frequency and width modulation IC
with many flexible packaging options. One
combination of internal terminals is packaged in
the space-saving TO-92 package (A/B versions)
for 65kHz or 100kHz switching frequency and with
400mA or 800mA current limit. Consuming only
0.15W in standby, the IC features over-current,
hiccup mode short circuit, and under-voltage
protection mechanisms.
The ME8100 is ideal for use in high
performance universal adaptors and chargers.
Features：
Lowest Total Cost Solution
0.15W Standby Power
Emitter Drive Allows Safe NPN Flyback Use
Hiccup Mode Short Circuit
Current Mode Operation
Over-Current Protection
Under-voltage Protection with Auto-restart
Proprietary Scalable Output Driver
Flexible Packaging Options (including
TO-92)
65kHz Switching Frequency
Selectable 0.4A to 0.8A Current Limit
Applications：
Battery Chargers
Power Adaptors
Standby Power Supplies
Appliances
Universal Off-line Power Supplies
Selection Guide：
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HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
Ver 01
TYPE
ME8100Axx
ME8100Bxx
POSTFIX
T
T
PACKAGE
TO-92
TO-92
SWITHING
FREQUENCY
65KHz
65KHz
CURRENT LIMIT
400mA
800mA
Pin Configuration：
Pin Assignment：
ME8100Axx
PIN Number
TO-92
1
2
3
PIN NAME
VDD
GND
DRV
FUNCTION
Power Supply Pin. Connect to optocoupler's emitter.
Internally limited to 5.5V max. Bypass to GND with a proper
compensation network.
Ground
Driver Output (TO-92 Only). Connect to emitter of the high
voltage NPN or MOSFET.
ME8100Bxx
PIN Number
TO-92
1
2
3
PIN NAME
VDD
GND
DRV
FUNCTION
Power Supply Pin. Connect to optocoupler's emitter.
Internally limited to 5.5V max. Bypass to GND with a proper
compensation network.
Ground
Driver Output (TO-92 Only). Connect to emitter of the high
voltage NPN or MOSFET.
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HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
Ver 01
Absolute Maximum Ratings：
PARAMETER
VDD Pin Voltage
DRV Pin voltage
VDD current
Continuous Total
TO-92
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Soldering temperature and time
SYMBAL
V
DD
V
DRV
I
DD
Pd
T
Opr
T
stg
T
solder
RATINGS
-0.3 to 6
-0.3 to 18
20
500
-25~+125
-40~+125
260
℃
, 10s
UNITS
V
V
mA
mW
℃
℃
Electrical Characteristics：
(Measuring conditions：Unless otherwise specified , V
IN
=4V，T
opt
=25℃。)
ME8100Axx/Bxx
SYMBOL
Vstar
PARAMETER
VDD Star Voltage
CONDITIONS
Rising edge
DRV must
be higher
than this
voltage to
star up
ME8100A
ME8100B
MIN
4.75
TYP
5
8.6
9.6
5.8
Falling edge
10mA
VDD=4V before V
UV
Freq=0
VDD=4V
VDD=4.6V
ME8100A
VDD=V
UV
+0.1v
ME8100B
55
67
3.17
5.15
3.35
5.45
0.23
0.4
65
75
3.5
400
800
-0.2
9
1nF load,15Ω pull-up
1nF load,15Ω pull-up
30
20
3.53
5.75
0.45
1
85
83
MAX
5.25
10.5
V
11.5
V
V
V
mA
mA
%
%
mA
A/V
Ω
Ns
Ns
UNITS
V
V
DRVST
DRV Start Voltage
DRV Short-Circuit Detect
Threshold
VDDUnder-voltage
Threshold
VDD ClampVoltage
Startup Supply Current
Supply Current
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
Effective Current Limit
VDD to DRV
Current
Coefficient
VDD Dynamic Impedance
DRV Rise Time
DRV Fall Time
V
SCDRV
V
UV
I
DDST
I
DD
f
SW
D
MAX
D
MIN
I
LIM
G
GAIN
R
VDD
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HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
Ver 01
Function Description：
Figure 2 shows the
Functional Block Diagram
of the ME8100. The main components include
switching control logic, two on-chip
Medium-voltage power-MOSFETs with parallel
current sensor, driver, oscillator and ramp
generator, current limit VC generator, error
comparator, hiccup control, bias and
undervoltage-lockout, and regulator circuitry.
As seen in Figure 2, the design has 6 internal
terminals. VDD is the power supply terminal.DRV1
and DRV2 are linear driver outputs that can drive
the emitter of an external high voltage NPN
transistor or N-channel MOSFET. This
emitter-drive method takes advantage of the high
VCBO of the transitor, allowing a low cost
ransistor such as ‘13003 (VCBO = 700V) or ‘13002
(VCBO = 600V) to be used for a wide AC input
range. The slew-rate limited driver coupled with the
turn-off characteristics of an external NPN result in
lower EMI.
The driver peak current is designed to have a
negative voltage coefficient with respect to supply
voltage VDD, so that lower supply voltage
utomatically results in higher RV1 peak current.
This way, the optocoupler can control VDD directly
to affect driver current.
Startup Sequence:
Figure 1 shoes a Simplified Application Circuit for
the ME8100. Initially, the small current through
resistor R1 charges up the capacitor C1, and the
BJT acts as a follower to bring up the DRV1
voltage. An internal regulator generates a VDD
voltage equal to VDRV1 – 3.6V for ME8100A
(VDRV1 – 4.6V for ME8100B) but limits it to
5.5Vmax. As VDD crosses 5V, the regulator
sourcing function stops and VDD begins to drop
due to its current consumption. As VDD voltage
decreases below 4.75V, the IC starts to operate
with increasing driver current. When the output
voltage reaches regulation point, the optocoupler
feedback circuit stops VDD from decreasing
further. The switching action also allows the
auxiliary windings to take over in supplying the
C1 capacitor. Figure 3 shows a typical startup
sequence for the ME8100. To limit the auxiliary
voltage, use a 12V zener diode for ME8100A or
a 13V zener for ME8100B (D1 diode in Figure 1).
Even though up to 2MΩ startup resistor (R1) can
be used due to the very low startup current, the
actual R1 value should be chosen as a
compromise between standby power and startup
time delay.
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HIGH PERFORMANCE OFF-LINE CONTROLLER ME8100 Series
Ver 01
1. FREQ terminal wire-bonded to VDD in ME8100A(TO-92)
2. DRV2 terminal wire-bonded to DRV1 in ME8100B (TO-92)
Figure 2. Functional Block Diagram
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