C-Series SiPM Sensors
Silicon Photomultipliers
(SiPM), Low-Noise,
Blue-Sensitive
The C−Series low-light sensors from ON Semiconductor feature an
industry-leading low dark-count rate combined with a high PDE. For
ultrafast timing applications, C-Series sensors have a fast output that
can have a rise time of 300 ps and a pulse width of 600 ps. The
C−Series is available in different sensor sizes (1 mm, 3 mm and 6 mm)
and packaged in a 4-side tileable surface mount (SMT) package that is
compatible with industry standard, lead-free, reflow soldering
processes.
The C−Series Silicon Photomultipliers (SiPM) form a range of high
gain, single-photon sensitive, UV-to-visible light sensors. They have
performance characteristics similar to a conventional PMT, while
benefiting from the practical advantages of solid-state technology: low
operating voltage, excellent temperature stability, robustness,
compactness, output uniformity, and low cost. For advice on the usage
of these sensors please refer to the
Biasing and Readout
Application
Note.
Table 1. PERFORMANCE PARAMETERS
Sensor
Size
1 mm
3 mm
6 mm
1 mm
3 mm
6 mm
1 mm
3 mm
6 mm
1 mm
3 mm
6 mm
Microcell Size
10m
,
20m, 35m
20m, 35m, 50m
35m
10m
,
20m, 35m
20m, 35m, 50m
35m
10m
,
20m, 35m
20m, 35m, 50m
35m
10m
,
20m, 35m
20m, 35m, 50m
35m
Peak Wavelength (lp)
420
nm
Spectral Range (Note 4)
300
950
nm
Recommended overvoltage Range
(Voltage above Vbr) (Note 2)
1.0
5.0
V
Parameter
(Note 1)
Breakdown Voltage (Vbr) (Note 3)
Overvoltage
Min.
24.2
Typ.
Max.
24.7
Units
V
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Figure 1. C−Series Sensors
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
November, 2018
−
Rev. 6
1
Publication Order Number:
MICROC−SERIES/D
C−Series SiPM Sensors
Table 1. PERFORMANCE PARAMETERS
(continued)
Sensor
Size
1 mm
Microcell Size
10m
20m
35m
1 mm
10m
20m
35m
3 mm
20m
35m
50m
3 mm
20m
35m
50m
6 mm
6 mm
1 mm
35m
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
1 mm
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
35m
Dark Current (Note 6)
Vbr + 2.5 V
Gain
(anode to cathode readout)
Vbr + 2.5 V
Vbr + 5.0 V
Vbr + 2.5 V
Vbr + 5.0 V
Vbr + 2.5 V
Vbr + 5.0 V
Parameter
(Note 1)
PDE (Note 5) at
lp
Overvoltage
Vbr + 2.5 V
Min.
Typ.
14
24
31
18
31
41
24
31
35
31
41
47
31
41
2
×
10
5
1
×
10
6
3
×
10
6
1
×
10
6
3
×
10
6
6
×
10
6
3
×
10
6
1
5
15
50
154
319
618
3
16
49
142
443
914
1750
nA
nA
nA
nA
nA
nA
nA
Max.
Units
%
%
%
%
%
%
%
%
%
%
%
%
%
%
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2
C−Series SiPM Sensors
Table 1. PERFORMANCE PARAMETERS
(continued)
Sensor
Size
1 mm
Microcell Size
10m
20m
35m
3 mm
20m
35m
50m
6 mm
1 mm
3 mm
6 mm
1 mm
3 mm
6 mm
1 mm
35m
10m, 20m, 35m
20m, 35m, 50m
35m
10m, 20m, 35m
20m, 35m, 50m
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
1 mm
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
1 mm
35m
10m
20m
35m
Capacitance (Note 9)
(fast terminal to cathode)
Vbr + 2.5 V
Capacitance (Note 9)
(anode−cathode)
Vbr + 2.5 V
Microcell recharge time constant (Note 8)
Signal Pulse Width
−
Fast Output (FWHM)
Rise Time
−
Fast Output (Note 7)
Parameter
(Note 1)
Dark Count Rate
Overvoltage
Vbr + 2.5 V
Min.
Typ.
30
30
30
300
300
300
1200
0.3
0.6
1.0
0.6
1.5
3.2
5
23
82
23
82
159
95
50
90
100
770
850
920
3400
1
1
1
Max.
96
96
96
860
860
860
3400
Units
kHz
kHz
kHz
kHz
kHz
kHz
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
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3
C−Series SiPM Sensors
Table 1. PERFORMANCE PARAMETERS
(continued)
Sensor
Size
3 mm
Microcell Size
20m
35m
50m
6 mm
1 mm
3 mm
6 mm
1 mm
3 mm
6 mm
1 mm
35m
10m, 20m, 35m
20m, 35m, 50m
35m
10m, 20m, 35m
20m, 35m, 50m
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
1 mm
35m
10m
20m
35m
3 mm
20m
35m
50m
6 mm
35m
Afterpulsing
Vbr + 2.5 V
Crosstalk
Vbr + 2.5 V
0.6
3
7
3
7
10
7
0.2
0.2
0.2
0.2
0.2
0.6
0.2
%
%
%
%
%
%
%
%
%
%
%
%
%
%
Temperature dependence of Gain (Note 10)
−0.8
%/°C
Temperature dependence of Vbr
Parameter
(Note 1)
Capacitance (Note 9)
(fast terminal to cathode)
Overvoltage
Vbr + 2.5 V
Min.
Typ.
20
12
7
48
21.5
Max.
Units
pF
pF
pF
pF
mV/°C
1. All measurements made at 2.5 V overvoltage and 21°C unless otherwise stated.
2. Please consult the maximum current levels on page 6 when selecting the overvoltage to apply.
3. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of
√I
vs V, where I is the current and
V is the bias voltage.
4. The range where PDE > 1% at Vbr + 5.0 V.
5. Note that the PDE does not contain contributions from afterpulsing or crosstalk.
6. Dark current derived from dark count data as DC
×
M
×
q
×
(1 + CT), where DC is dark count, M is gain, q is the charge of an electron, and
CT is cross talk.
7. Measured as time to go from 10% to 90% of the peak amplitude.
8. RC charging time constant of the microcell (t)
9. Internal capacitance of the sensor. Typically add 2−3 pF for sensor in package. Listed by unique microcell size for each part version.
10. Quoted as the percentage change per degree C from the measured value at 21°C.
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4
C−Series SiPM Sensors
GENERAL PARAMETERS
Table 2. GENERAL PARAMETERS
1 mm
10010, 10020, 10035
Active area
No. of microcells
1
×
1 mm
2
10010: 2880
10020: 1296
10035: 504
10010: 28%
10020: 48%
10035: 64%
3 mm
30020, 30035, 30050
3
×
3 mm
2
30020: 10998
30035: 4774
30050: 2668
30020: 48%
30035: 64%
30050: 72%
6 mm
60035
6
×
6 mm
2
60035: 18980
Microcell fill factor
60035: 64%
Table 3. PACKAGE PARAMETERS
1 mm
10010, 10020, 10035
Package dimensions
Recommended operating
temperature range
Maximum storage temperature
Soldering conditions
1.5
×
1.8 mm
2
3 mm
30020, 30035, 30050
4
×
4 mm
2
−40°C
to +85°C
+105°C
Lead−free, reflow soldering process compatible
(MSL 3 for tape & reel quantities; MSL 4 for tape only qty.)
See the
SMT Handling Tech Note
for more details.
Clear transfer molding compound
1.59 @ 420 nm
6 mm
60035
7
×
7 mm
2
Encapsulant type
Encapsulant refractive Index
Table 4. MAXIMUM CURRENT LEVELS FOR EACH SENSOR SIZE
1 mm
10010, 10020, 10035
6 mA
3 mm
30020, 30035, 30050
15 mA
6 mm
60035
20 mA
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5
DSP 与 ARM 处理器
