J-Series SiPM Sensors
Silicon Photomultipliers
(SiPM), High PDE and
Timing Resolution Sensors
in a TSV Package
www.onsemi.com
ON Semiconductor’s J-Series low-light sensors feature a high PDE
(photon detection efficiency) that is achieved using a high-volume,
P-on-N silicon foundry process. The J-Series sensors incorporate
major improvements in the transit time spread which results in
a significant improvement in the timing performance of the sensor.
J-Series sensors are available in different sizes (3 mm, 4 mm and
6 mm) and use a TSV (Through Silicon Via) process to create
a package with minimal deadspace, that is compatible with industry
standard lead-free, reflow soldering processes.
The J-Series Silicon Photomultipliers (SiPM) combine high
performance with the practical advantages of solid-state technology:
low operating voltage, excellent temperature stability, robustness,
compactness, output uniformity, and low cost. For more information
on the J-Series sensors please refer to the
website.
Table 1. GENERAL PARAMETERS
Parameter
(Note 1)
Breakdown Voltage (Vbr) (Note 2)
Overvoltage (OV)
Operating Voltage (Vop = Vbr + OV))
Spectral Range (Note 3)
Peak PDE Wavelength (lp)
Temperature dependence of Vbr
Minimum
24.2
1
25.2
200
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
Typical
Maximum
24.7
6
30.7
900
Unit
V
V
V
nm
nm
mV/°C
420
21.5
1. All measurements made at 21°C unless otherwise stated.
2. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of
√I
vs V, where I is the current and
V is the bias voltage.
3. The range where PDE > 2.0% at Vbr + 6.0 V.
Table 2. PHYSICAL PARAMETERS
3 mm
Parameter
Active Area
No. of Microcells
Microcell Fill Factor
30020, 30035
3.07
×
3.07 mm
2
30020: 14,410
30035: 5,676
30020: 62%
30035: 75%
4 mm
40035
3.93
×
3.93 mm
2
40035: 9,260
40035: 75%
6 mm
60035
6.07
×
6.07 mm
2
60035: 22,292
60035: 75%
©
Semiconductor Components Industries, LLC, 2017
November, 2018
−
Rev. 5
1
Publication Order Number:
MICROJ−SERIES/D
J−Series SiPM Sensors
Table 3. PERFORMANCE PARAMETERS
30035
40035
Overvoltage
Parameter
(Note 4)
PDE (Note 5)
Dark Count Rate
Gain (anode-cathode)
Dark Current
−
typical
Dark Current
−
maximum
Rise Time (Note 6)
−
anode-cathode output
Microcell Recharge Time Constant (Note 7)
Capacitance (Note 8) (anode output)
Capacitance (Note 8) (fast output)
Fast Output Pulse Width (FWHM)
Crosstalk
Afterpulsing
8
0.75
+2.5 V
38
50
2.9
×
10
6
0.23
0.31
90
45
1070
40
1.5
25
5.0
8
0.75
30020
Overvoltage
Parameter
(Note 4)
PDE (Note 5)
Dark Count Rate
Gain (anode-cathode)
Dark Current
−
typical
Dark Current
−
maximum
Rise Time (Note 6)
−
anode-cathode output
Microcell Recharge Time Constant (Note 7)
Capacitance (Note 8) (anode output)
Capacitance (Note 8) (fast output)
Fast Output Pulse Width (FWHM)
Crosstalk
Afterpulsing
4.
5.
6.
7.
8.
2.5
0.75
+2.5 V
30
50
1.0
×
10
6
0.1
0.2
130
15
1040
50
1.4
7.5
5.0
+5 V
38
125
1.9
×
10
6
0.45
0.72
160
ps
ns
pF
pF
ns
%
%
mA
Unit
%
kHz/mm
2
+6 V
50
150
6.3
×
10
6
1.9
3.00
110
+2.5 V
38
50
2.9
×
10
6
0.35
0.45
90
48
1800
70
1.7
25
5.0
8
0.75
+6 V
50
150
6.3
×
10
6
3.0
4.0
110
+2.5 V
38
50
2.9
×
10
6
0.9
1.25
180
50
4140
160
3.0
25
5.0
+6 V
50
150
6.3
×
10
6
7.5
12.0
250
ps
ns
pF
pF
ns
%
%
mA
Unit
%
kHz/mm
2
60035
Unit
All measurements made at 21°C unless otherwise stated.
PDE does not contain afterpulsing or crosstalk, and is quoted at the peak wavelength (l
p
).
Measured as time to go from 10% to 90% of the peak amplitude and measured over a 1
W
series output resistor.
RC charging time constant of the microcell (τ).
Capacitance values are for the complete TSV package.
Table 4. TVS PACKAGE SPECIFICS
3 mm
30020, 30035
Package Dimensions
Recommended Operating Temperature Range
Soldering Conditions
Cover Material
Cover Refractive Index
Moisture Sensitivity Level
Maximum Average Current
Tape & reel
Cut tape
10 mA
3.16
×
3.16 mm
2
4 mm
40035
4.00
×
4.00 mm
2
−40°C −
+85°C
Reflow Solder
Glass
1.53 @ 436 nm
MSL3*
MSL4*
10 mA
15 mA
6 mm
60035
6.13
×
6.13 mm
2
*Please refer to the
TSV Handling and Soldering
guide for more information on MSL for different delivery options.
www.onsemi.com
2
J−Series SiPM Sensors
PERFORMANCE PLOTS
Figure 1. Photon Detection Efficiency (PDE)
(MicroFJ−60035−TSV)
Figure 2. PDE vs. Overvoltage
(MicroFJ−60035−TSV)
Figure 3. PDE vs. Crosstalk
(MicroFJ−60035−TSV)
www.onsemi.com
3
J−Series SiPM Sensors
Figure 4. Gain vs. Overvoltage
(MicroFJ−30035−TSV)
Figure 5. Fast Output Pulse Shape
(MicroFJ−30035, MicroFJ−40035, MicroFJ−60035
Vbr + 2.5 V, 10
W
Sense Resistor)
Figure 6. Standard Output Pulse Shape
(MicroFJ−30035, MicroFJ−40035, MicroFJ−60035
Vbr + 2.5 V, 10
W
Sense Resistor)
www.onsemi.com
4
J−Series SiPM Sensors
EVALUATION BOARD OPTIONS
SMA BIASING BOARD (MicroFJ−SMA−XXXXX)
The MicroFJ−SMA is a printed circuit board (PCB) that
can facilitate the evaluation of the J-Series sensors. The
board has three female SMA connectors for connecting the
bias voltage, the standard output from the anode and the fast
output signal. The output signals can be connected directly
to a 50
W-terminated
oscilloscope for viewing. The biasing
and output signal tracks are laid out in such a way as to
preserve the fast timing characteristics of the sensor.
The MicroFJ−SMA is recommended for users who
require a plug-and-play set-up to quickly evaluate J-Series
TSV sensors with optimum timing performance. The board
also allows the standard output from the anode to be
observed at the same time as the fast output. The outputs can
be connected directly to the oscilloscope or measurement
device, but external preamplification may be required to
boost the signal. The table below lists the SMA board
connections. The SMA board electrical schematics are
available to download in the
AND9808/D
document.
circuit schematic is shown in Figure 8. Please consult the
Readout and Biasing Application Note
for further
information on biasing. The SMTPA board electrical
schematics are available to download in the
AND9808/D.
Figure 7. Top View of the SMTPA Board
Showing the Pin Numbering
MicroFJ−SMA−XXXXX
Output
Vbias
Fout
Sout
Function
Positive bias input (cathode)
Fast output
Standard output (anode)
PIN ADAPTER (MicroFJ−SMTPA−XXXXX)
Figure 8. SMTPA Circuit Schematic
MicroFJ−SMTPA−XXXXX
Pin No.
1
2
3
4
5
Connection
Anode
Fast output
Cathode
Ground
No connect
The TSV Pin Adapter board (SMTPA) is a small PCB
board that houses the TSV sensor and has through-hole pins
to allow its use with standard sockets or probe clips. This
product is useful for those needing a quick way to evaluate
the TSV package without the need for specialist
surface-mount soldering. While this is a ‘quick fix’ suitable
for many evaluations, it should be noted that the timing
performance from this board will not be optimized and if the
best possible timing performance is required, the
MicroFJ−SMA−XXXXX is recommended. The SMTPA
www.onsemi.com
5
测试/测量
