JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
MJE170
TRANSISTOR (PNP)
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-40
-7
-3
1.5
83
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
-60
-40
-7
-0.1
-0.1
50
30
12
-0.3
-1.7
-1.5
-2
-1.2
50
50
V
V
V
V
V
pF
MHz
250
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-7V,I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-1.5A
I
C
=-500mA,I
B
=-50mA
I
C
=-3A,I
B
=-600mA
I
C
=-1.5A,I
B
=-150mA
I
C
=-3A,I
B
=-600mA
V
CE
=-1V, I
C
=-500mA
V
CB
=-10V,I
E
=0, f=10MHz
V
CE
=-10V,I
C
=-100mA, f=10MHz
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
A,Dec,2010
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