N-Channel Enhancement Mode MOSFET
Features
Surface-mounted package
Advanced trench cell design
Extremely low threshold voltage
ESD protected ( HBM > 2KV )
Quick reference
BV
≧
60 V
P
tot
≦
0.83 W
I
D
≦
0.5 A
R
DS(ON)
≦
3 Ω @ V
GS
= 10 V
R
DS(ON)
≦
4 Ω @ V
GS
= 4.5 V
SOT-23
Top View
1 :Gate(G) 2 :Source(S)
3 :Drain(D)
Limiting Values
Notes：* Surface Mounted on 1 in
2
pad area, t
≤ 10 sec
** Pulse width ≤ 300
μ
s, duty cycle ≤ 2 %
1 of 6
Electrical Characteristics
( T
A
= 25 °C Unless Otherwise Noted )
Notes：a : Pulse test ; pulse width ≤ 300
μ
s, duty cycle ≤ 2 %
b : Guaranteed by design, not subject to production testing
2 of 6
Typical Characteristics
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4 of 6
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