DATA SHEET
MMBT2222A
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
.056(1.40)
.119(3.00)
.110(2.80)
40 Volts
POWER
225 mWatts
SOT- 23
Unit: inch (mm)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: M2A
Top View
3
Collector
1
BASE
3
COLLECTOR
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
.006(.15)MAX
.020(.50)
.013(.35)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PA R A M E TE R
C ol ct r-E m it rVolage
l o
e
te
t
C ol ct r-B ase Volage
l o
e
t
E m it r-B ase Volage
te
t
C ol ct rC urent-C ontnuous
l o
e
r
i
S ym bol
V
C EO
V
C BO
V
EBO
I
C
Val e
u
40
75
6.
0
600
U nis
t
V
V
V
mA
THERMAL CHARACTERISTICS
PA R A M E TE R
M ax P ow erD i si aton ( ot 1)
s p i
N e
Ther alR esi t nce ,Juncton t A m bi nt
m
sa
i o
e
Juncton Tem per t r
i
aue
S t r ge Tem per t r
oa
aue
S ym bol
P
TO T
Rθ
JA
T
J
TI
STG
Val e
u
225
556
- 5 t 150
5 o
- 5 t 150
5 o
O
.044(1.10)
.035(0.90)
.103(2.60)
.086(2.20)
• Collector current IC = 600mA
•
In compliance with EU RoHS 2002/95/EC directives
.047(1.20)
.007(.20)MIN
U nis
t
mW
C/
W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0-JUN.21.2005
PAGE . 1
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E mi tte r - B a s e B re a k d o wn Vo lta g e
B a s e C ut o f f C ur r e nt
S ym b o l
V
(B R)
C E O
V
(B R)
C B O
V
(B R)
E B O
I
B L
I
C E X
C o l l e c t o r C ut o f f C ur r e nt
I
C B O
E m i t t e r C ut o f f C ur r e nt
I
E B O
V
C E
= 6 0 V , I
E
= 0 ,
V
C E
= 6 0 V , I
E
= 0 , T
J
= 1 2 5
O
C
V
E B
= 3 . 0 V , IC = 0 ,
I
C
= 0 . 1 m A , V
C E
= 1 0 V
I
C
= 1 . 0 m A , V
C E
= 1 0 V
I
C
= 1 0 m A , V
C E
= 1 0 V
I
C
= 1 0 m A , V
C E
= 1 0 V , T
J
= 1 2 5
O
C
I
C
= 1 5 0 m A , V
C E
= 1 0 V ( N o t e 2 )
I
C
= 1 5 0 m A , V
C E
= 1 V ( N o t e 2 )
I
C
= 5 0 0 m A , V
C E
= 1 0 V ( N o t e 2 )
I
C
= 1 5 0 m A , I
B
= 1 5 m A
I
C
= 5 0 0 m A , I
B
= 5 0 m A
I
C
= 1 5 0 m A , I
B
= 1 5 m A
I
C
= 5 0 0 m A , I
B
= 5 0 m A
V
C B
= 1 0 V , I
E
= 0 , f = 1 M H z
V
C B
= 0 . 5 V , I
C
= 0 , f = 1 M H z
V
C C
=3 V,V
B E
=-5 V,
I
C
= 1 5 0 m A , I
B
= 1 5 m A
V
C C
=3 V,V
B E
=-5 V,
I
C
= 1 5 0 m A , I
B
= 1 5 m A
V
C C
= 3 0 V , I
C
= 1 5 0 m A
I
B
1 = I
B
2 = 1 5 m A
V
C C
= 3 0 V , I
C
= 1 5 0 m A
I
B
1 = I
B
2 = 1 5 m A
-
-
35
50
75
35
100
50
40
-
0 .6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
100
-
-
-
-
300
-
-
0 .3
1 .0
1 .2
2 .0
8 .0
25
10
25
225
60
nA
uA
nA
Te s t C o n d i t i o n
I
C
= 1 . 0 m A , I
B
= 0
I
C
= 1 0 u A , I
E
= 0
I
E
= 1 0 u A , I
C
= 0
V
C E
=6 0 V, V
E B
=3 .0 V
V
C E
=6 0 V, V
E B
=3 .0 V
M IN .
40
75
6 .0
-
-
T YP.
-
-
-
-
-
MA X .
-
-
-
20
10
U ni t s
V
V
V
nA
nA
D C C ur r e nt G a i n
h
F E
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
(No te 2 )
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
(No te 2 )
C o l l e c t o r - B a s e C a p a c i t a nc e
E m i t t e r - B a s e C a p a c i t a nc e
D e l a y Ti m e
R i s e Ti m e
S t o r a g e Ti m e
F a l l Ti m e
V
C E (S AT)
V
B E (S AT)
C
CBO
C
EBO
td
tr
ts
tf
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30V
+30V
+16V
0
-2V
< 2ns
1.0 to 100us
Duty Cycle ~ 2.0%
200Ω
+16V
0
1.0 to 100us
Duty Cycle ~ 2.0%
200Ω
1KΩ
C
S
* < 10pF
-14V
< 20ns
1KΩ
1N914
-4V
C
S
* < 10pF
Scope rise time < 4ns
* Total shunt capacitance of test jig, connectors, and oscilloscope
Fig. 1.
Turn-On Time
Fig. 2.
Turn-Off Time
REV.0-JUN.21.2005
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE
350
300
250
T
J
= 100˚ C
200
T
J
= 150˚ C
0.8
0.7
0.6
0.5
T
J
= 100˚ C
T
J
= 25˚ C
V
BE
(on)
h
FE
150
100
50
0
0.1
1
V
CE
= 10V
T
J
= 25˚ C
0.4
0.3
0.2
T
J
= 150˚ C
V
CE
= 10V
0.1
0.0
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical h
FE
vs Collector Current
500
450
400
350
I
C
/I
B
= 10
Fig. 4. Typical V
BE
vs Collector Current
1.2
T
J
= 150 ˚C
I
C
/I
B
= 10
1.0
V
CE
(sat) (mV)
0.8
300
250
200
150
100
V
BE
(sat) (V)
T
J
= 25 ˚C
0.6
T
J
= 150 ˚C
0.4
0.2
50
0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
T
J
= 25 ˚C
T
J
= 100 ˚C
0.0
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Fig. 5. Typical V
CE
(sat) vs Collector Current
100
Fig. 6. Typical V
BE
(sat) vs Collector Current
f=1 MHz
Capacitance (pF)
C
IB
(EB)
10
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 7. Typical Capacitances vs Reverse Voltage
REV.0-JUN.21.2005
PAGE . 3
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2008
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0-JUN.21.2005
PAGE . 4
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