MMBT3906
PNP Silicon General Purpose Transistor
for switching and amplifier applications.
As complementary types the NPN transistors
MMBT3904 is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
stg
Value
40
40
6
200
350
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
MMBT3906
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 0.1 mA
at -V
CE
= 1 V, -I
C
= 1 mA
at -V
CE
= 1 V, -I
C
= 10 mA
at -V
CE
= 1 V, -I
C
= 50 mA
at -V
CE
= 1 V, -I
C
= 100 mA
Collector Base Cutoff Current
at -V
CB
= 30 V
Emitter Base Cutoff Current
at -V
EB
= 6 V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
=1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Base Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
Current Gain Bandwidth Product
at -V
CE
= 20 V, -I
C
= 10 mA, f = 100 MHz
Output Capacitance
at -V
CB
= 5 V, I
E
= 0, f = 1 MHz
Delay Time
at -V
CC
= 3 V, -V
BE
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Rise Time
at -V
CC
= 3 V, -V
BE
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Storage Time
at -V
CC
= 3 V, -I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
Fall Time
at -V
CC
= 3 V, -I
C
= 10 mA, -I
B1
= I
B2
= 1 mA
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
CE(sat)
-V
BE(sat)
-V
BE(sat)
f
T
C
obo
t
d
t
r
t
s
t
f
Min.
60
80
100
60
30
-
-
40
40
6
-
-
0.65
-
250
-
-
-
-
-
Max.
-
-
300
-
-
50
50
-
-
-
0.25
0.4
0.85
0.95
-
4.5
35
35
225
75
Unit
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
ns
MMBT3906
Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50
0
0
25
50
75
100
O
125
150
Ambient Temperature: Ta ( C)
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