SOT-23 Plastic-Encapsulate Transistors
MMBT4403
TRANSISTOR (PNP)
FEATURES
Switching transistor
Formosa MS
SOT-23
MARKING
：2T
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
0.3
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.
BASE
2.
EMITTER
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Detay time
Rise time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test conditions
I
C
=-100μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-35V, I
E
=0
V
CE
=-35 V, I
B
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V, I
C
= -150mA
I
C
=-150mA, I
B
=-15mA
I
C
=- 150mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
100
Min
-40
-40
-5
-0.1
-0.1
-0.1
300
-0.4
-0.95
200
15
20
225
30
V
V
MHz
ns
ns
ns
ns
Max
Unit
V
V
V
μA
μA
μA
f
T
t
d
t
r
t
s
t
f
f =
100MHz
V
CC
=-30V,V
EB
=-2V,
I
C
=-150mA.I
B1
=-15mA
V
CC
=-30V, I
C
=-150mA.
I
B1
= I
B2
=-15mA
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
3
Page 1
DS-231172
SOT-23 Plastic-Encapsulate Transistors
MMBT4403
-250
Typical Characterisitics
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
1000
Formosa MS
h
FE
——
I
C
COMMON EMITTER
V
CE
=-2V
T
a
=100
℃
DC CURRENT GAIN
T
a
=25
℃
100
(mA)
-200
-1mA
-0.9mA
-0.8mA
I
C
COLLECTOR CURRENT
-150
-0.7mA
-0.6mA
-0.5mA
-100
-0.4mA
-0.3mA
-50
-0.2mA
I
B
=-0.1mA
-0
-0
-2
-4
-6
10
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-700
V
CEsat
β=10
——
I
C
-1.2
V
BEsat
β=10
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-300
T
a
=25
℃
-0.8
T
a
=100
℃
-100
T
a
=25
℃
-30
T
a
=100
℃
-0.4
-10
-1
-3
-0.0
-10
-30
-100
-600
-1
-3
-10
-30
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-600
I
C
COMMON EMITTER
V
CE
=-2V
—— V
BE
50
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
-100
C
ib
(pF)
T
a
=25
℃
I
C
COLLECTOR CURRENT
C
ob
10
T
a
=25
℃
-1
CAPACITANCE
1
-0.1
-10
T
a
=100
℃
-0.1
-0.0
C
-0.4
-0.8
-1.2
-1
-10
-30
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
-600
f
T
V
CE
=-10V
T
a
=25
℃
—— I
C
400
P
C
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(mW)
-10
300
TRANSITION FREQUENCY
f
T
-100
200
100
-10
-1
-3
-30
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
3
Page 2
DS-231172
SOT-23 Plastic-Encapsulate Transistors
MMBT4403
Typical Characterisitics
Formosa MS
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
SOT-23 Suggested Pad Layout
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
3
Page 3
DS-231172
电子工程世界
