JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC T
MMBTA55
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT–23
FEATURES
Driver Transistors
MARKING:2H
1. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-4
-500
225
556
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
Test conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-60V, I
E
=0
V
CE
=-60V, I
B
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-100mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V,I
C
=-100mA, f=100MHz
50
100
100
-0.25
-1.2
V
V
MHz
Min
-60
-60
-4
-0.1
-0.1
400
Typ
Max
Unit
V
V
V
µA
µA
www.cj-elec.com
1
B,Oct,2014
A,Jun,2014
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
SOT-23 Suggested Pad Layout
www.cj-elec.com
2
B,Oct,2014
A,Jun,2014
SOT-23 Tape and Reel
www.cj-elec.com
3
B,Oct,2014
A,Jun,2014
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