JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA94
FEATURES
High Breakdown Voltage
MARKING:4D
1. BASE
TRANSISTOR (PNP)
SOT–23
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-400
-400
-5
-100
350
357
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
Test conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-10V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-20V,I
C
=-10mA,
f=30MHz
50
80
70
40
40
-0.2
-0.3
-0.75
V
V
V
MHz
Min
-400
-400
-5
-0.1
-5
-0.1
300
Typ
Max
Unit
V
V
V
µA
µA
µA
A,Oct,2010
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