JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA27
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High Current
Low Voltage
High DC Current Gain
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
10
0.8
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE(1)
h
FE(2)
V
BE
f
T
*
*
*
*
Test
conditions
Min
60
60
10
Typ
Max
Unit
V
V
V
I
C
= 0.01mA,I
E
=0
I
C
=0.1mA,V
BE
=0
I
E
=0.1mA,I
C
=0
V
CB
=50V,I
E
=0
V
CE
=50V,I
E
=0
V
EB
=10V,I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA,I
B
=0.1mA
V
CE
=5V,I
C
=100mA
V
CE
=5V,I
C
=10mA,f=100MHz
0.1
0.5
0.1
10000
10000
1.5
2.0
125
μA
μA
μA
V
CE(sat)
V
V
MHz
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
A,Dec,2010
电子工程世界
