JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA44
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High Breakdown Voltage
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
500
400
6
0.3
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1) *
DC current gain
h
FE(2)
*
*
Test
conditions
Min
500
400
6
Typ
Max
Unit
V
V
V
I
C
= 0.1mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=400V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA,I
B
=0.1mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V,I
E
=0, f=1MHz
V
EB
=0.5V,I
C
=0, f=1MHz
V
(BR)EBO
0.1
0.1
40
50
45
40
0.4
0.5
0.75
0.75
7
130
200
μA
μA
h
FE(3) *
h
FE(4) *
V
CE(sat)(1) *
V
Collector-emitter saturation voltage
V
CE(sat)(2) *
V
CE(sat)(3)
*
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
V
BE (sat)
C
ob
C
ib
*
V
pF
pF
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
A,Dec,2010
电子工程世界
