JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
MPSA56
TRANSISTOR (PNP)
1.EMITTER
FEATURES
General Purpose Switching and Amplification.
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-4
-0.5
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
Test
conditions
Min
-80
-80
-4
-0.1
-0.1
-0.1
100
100
-0.25
-1.2
50
V
V
MHz
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= -0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-80V,I
E
=0
V
CE
=-60V,I
B
=0
V
EB
=-4V,I
C
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-100mA
I
C
=-100mA,I
B
=-10mA
I
C
=-100mA, V
CE
=-1V
V
CE
=-1V,I
C
=-100mA,f=100MHz
A,Dec,2010
Typical Characterisitics
Static Characteristic
-140
MPSA56
h
FE
——
I
C
V
CE
=-1V
T
a
=100
℃
(mA)
-120
I
B
=-800uA
I
B
= -720uA
I
B
=-640uA
I
B
= -560uA
I
B
=-480uA
I
B
=-400uA
COMMON
EMITTER
T
a
=25
℃
h
FE
500
-100
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
100
-80
-60
I
B
= -320uA
-40
I
B
=-240uA
I
B
=-160uA
I
B
= -80uA
-20
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-2000
V
BEsat
——
I
C
V
CEsat
-1000
——
I
C
-1000
T
a
=25
℃
T
a
=100
℃
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-100
T
a
=100
℃
T
a
=25
℃
β=10
-100
-1
-10
-100
-500
-10
-1
-10
-100
β=10
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-500
I
C
—— V
BE
(MHz)
1000
f
T
——
I
C
(mA)
I
C
-100
f
T
100
-10
COLLCETOR CURRENT
TRANSITION FREQUENCY
T =1
00
℃
a
T =2
5
℃
a
10
V
CE
= -1V
T
a
=25
℃
1
-3
-10
-100
-1
-0
-300
-600
-900
V
CE
=-1V
-1200
BASE-EMMITER VOLTAGE
V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
1000
C
ob
/ C
ib
——
V
CB
/ V
EB
700
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
-20
600
(pF)
100
C
ib
500
C
400
CAPACITANCE
C
ob
10
300
200
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
1
-0.1
-1
-10
100
0
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Dec,2010
150
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