JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPSW51
TRANSISTOR (PNP)
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
FEATURES
General Purpose Amplifier Transistor
Low Breakdown Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-5
-1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
Min
-40
-30
-5
-0.1
-0.1
55
60
50
-0.7
-1.2
50
30
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-3V,I
C
=0
V
CE
=-1V, I
C
=-0.01A
V
CE
=-1V, I
C
=-0.1A
V
CE
=-1V, I
C
=-1A
I
C
=-1A,I
B
=-0.1A
I
C
=-1A, V
CE
=-1V
V
CE
=-10V,I
C
=-50mA,f=20MHz
V
CB
=-10V,I
E
=0, f=1MHz
A,Dec,2010
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