Power Matters
™
Silicon Carbide Semiconductor Products
Low Switching Losses
Low Gate Resistance
High Power Density
High Thermal Conductivity
High Avalanche (UIS) Rating
Reduced Heat Sink Requirements
High Temperature Operation
Reduced Circuit Size and System Costs
Overview
Breakthrough Technology Combines High Performance with Low Losses
Extremely Low Switching Losses
• Zero reverse recovery charge improves
system efficiency
High Power Density
• Smaller footprint device reduces system size
and weight
High Thermal Conductivity
• 2.5x more thermally conductive than silicon
Reduced Sink Requirements
• Results in lower cost and smaller size
High Temperature Operation
• Increased power density and improved
reliability
Silicon Carbide (SiC) semiconductors are an innovative new
option for power electronic designers looking for improved
system efficiency, smaller form factor and higher operating
temperature in products covering industrial, medical,
mil-aerospace, aviation, and communcation market
segments. Microsemi’s next-generation SiC MOSFETS and
SiC SBDs are designed with higher repetitive unclamped
inductive switching (UIS) capability at rated current,
with no degradation or failures. The new SiC MOSFETs
maintain high UIS capability at approximately 10-15 Joules
per square centimeter (J/cm2) and robust short circuit
protection at 3-5 microseconds. The company’s SiC SBDs
are designed with balanced surge current, forward voltage,
thermal resistance and thermal capacitance ratings at
low reverse current for lower switching loss. In addition,
its SiC MOSFET and SiC SBD die can paired together for
use in modules. SiC MOSFET and SiC SBD products from
Microsemi will be qualified to the AEC-Q101 standard.
SiC is the perfect technology
to address high-frequency and
high-power-density applications
Lower power losses
Higher frequency cap.
Higher junction temp.
Easier cooling
Downsized system
Higher reliability
Automotive
Industrial
Aviation
Defense
Medical
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Higher Switching Frequency
Silicon Carbide (SiC) is the ideal technology for higher switching
frequency, higher efficiency, and higher power (>650 V)
applications. Target markets and applications include:
• Industrial—motor drives, welding, UPS, SMPS,
induction heating
• Transportation/automotive—EV battery charger,
onboard chargers, hybrid electric vehicle (HEV)/electric
vehicle (EV) powertrain, DC–DC converter, energy recovery
• Smart energy—PV inverter, wind turbine
• Medical—MRI power supply, X-ray power supply
• Commercial aviation—actuation, air conditioning,
power distribution
• Defense—motor drives, auxiliary
power supplies, integrated vehicle systems
SiC MOSFET and SiC Schottky Barrier Diode product lines
from Microsemi increase your system efficiency over silicon
MOSFET and IGBT solutions while lowering your total cost of
ownership by enabling downsized systems and smaller/lower
cost cooling.
Full In-House and Foundry Capabilities
Design
• Silvaco design and process simulator
• TCAD-TMA
• Mask-making and layout
• Solid works and FEA
Process
• High-temperature ion implantation
• High-temperature annealing
• SiC MOSFET gate oxide
• ASML steppers
• RIE and plasma etching
• Sputtered and evaporated metal deposition
Discrete Products
Released
Analytical and Support
• SEM/EDAX
• Thermal imaging
Products
2013
•
Future Products
• Photo Emission Microscope system (Phemos 1000)
Reliability Testing and Screening
Diodes: 10A, 20A,
• AEC-Q101
• HTRB and HTGB
•
175°C
600 Volt
•
150°C Rated Schottky Barrier
30A
1700V-175° C Rated Schottky
Barrier Diodes: 10A, 20A
1200V-175°C Rated Schottky
Barrier Diode: 50A
Released Products
james.kerr 4/22/13 1
Deleted:
Rated Schottky Barrier
• Sonoscan and X-ray
10A, 20A, 30A
Diodes:
1200 Volt
2014
•
james.kerr 4/22/13 1
Deleted:
600 Volt
•
150°C Rated Schottky
james.kerr 4/22/13 1
Barrier
Font:12
Formatted:
3
SiC Discretes and Modules Nomenclature
SiC Discretes
MSC nnn Sxy vvv p
MSC
Microsemi
Corporation
p
Package code
B = TO-247
K = TO-220
S = D3PAK
J = SOT-227
nnn
SiC SBD:
Current
SiC MOSFET: RDS(on)
Sxy
S: Silicon Carbide (SiC)
x: D = Diode
M = MOSFET
y: Revision or generation
vvv
Voltage
070 = 700 V
120 = 1200 V
170 = 1700 V
SP6LI SiC Power Modules
MSC MC 120 A M02 C T 6LI N G
MSC = Microsemi Corporation
Semiconductor type:
SM = MSC SiC MOSFET
MC = Wolfspeed
Breakdown voltage:
90 = 900 V
120 = 1200 V
170 = 1700 V
Electrical topology:
A = Phase Leg
RDS(on):
M02 = 02 mOhms
M03 = 03 mOhms
M08 = 08 mOhms
G = RoHS compliant
Baseplate material:
M = AISiC
Left blank = Copper
Substrate material:
A = AIN
N = Si3N4
Package:
6LI = SP6 Low Inductance
Anti-parallel Diode:
C = added SiC Diode
Left blank = no diode
Temperature Sensor:
T = Thermistor (NTC)
Left blank = no NTC
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Discrete Products
SiC Schottky Barrier Diodes
Part Number
MSC010SDA070B
MSC010SDA070K
MSC030SDA070B
MSC030SDA070K
MSC050SDA070B
MSC010SDA120B
MSC010SDA120K
MSC015SDA120B
MSC030SDA120B
MSC030SDA120K
MSC030SDA120S
MSC050SDA120B
MSC050SDA120S
MSC010SDA170B
MSC030SDA170B
MSC050SDA170B
Voltage (V)
700
I
F
(A)
10
10
30
30
50
10
10
15
30
30
30
50
50
10
30
50
Package
TO-247
TO-220
TO-247
TO-220
TO-247
TO-247
TO-220
TO-247
TO-247
TO-220
D3PAK
TO-247
D3PAK
TO-247
TO-247
TO-247
1200
1700
SiC MOSFETs
Part Number
MSC090SMA070B
MSC090SMA070S
MSC060SMA070B
MSC060SMA070S
MSC035SMA070B
MSC035SMA070S
MSC015SMA070B
MSC015SMA070S
MSC280SMA120B
MSC280SMA120S
MSC140SMA120B
MSC140SMA120S
MSC080SMA120B
MSC080SMA120S
MSC080SMA120J
MSC040SMA120B
MSC040SMA120S
MSC040SMA120J
MSC025SMA120B
MSC025SMA120S
MSC025SMA120J
MSC750SMA170B
MSC750SMA170S
MSC045SMA170B
MSC045SMA170S
Voltage (V)
RDS(on)
90 mΩ
700
60 mΩ
35 mΩ
15 mΩ
280 mΩ
140 mΩ
1200
80 mΩ
40 mΩ
25 mΩ
1700
750 mΩ
45 mΩ
Package
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
TO-247
D3PAK
SiC MOSFET Features and Benefits
Characteristics
Breakdown field (MV/cm)
Electron sat. velocity (cm/s)
Bandgap energy (ev)
Thermal conductivity (W/m.K)
SiC vs. Si
10x higher
2x higher
3x higher
3x higher
Results
Lower on-resistance
Faster switching
Higher junction temperature
Higher power density
Benefits
Higher efficiency
Size reduction
Improved cooling
Higher current capabilities
TO-247-3L
TO-247
TO-220
D3PAK
(TO-268)
SOT-227
5
微控制器 MCU
