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MT100DT16L1

Three Phase Bridge Thyristor

厂商名称:爱普特半导体(APTSEMI)

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MT100DT18L1
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
800 to 1800V
100Amp
Features
Circuit
Blocking voltage:800 to 1800V
Three Phase Bridge and a Thyristor
Isolated Module package
Applications
Inverter for AC or DC motor control
Current stabilized power supply
Switching power supply
UL recognized applied for file no. E360040
Module Type
TYPE
MT100DT08L1
MT100DT12L1
MT100DT16L1
MT100DT18L1
V
RRM
/ V
DRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Item
Conditions
Tc=100℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
100
1200
7200
3000
-40 to +150
-40 to +125
Units
A
A
A
2
s
V
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M5)
Module(Approximately)
3±15%
3±15%
210
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heatsink
Values
0.18
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
FM
Item
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=100A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.35
≤0.5
≤6
Units
V
mA
mA
I
RRM
Document Number: S-M0057
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT100DT18L1
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Item
Conditions
Tc=92℃, Single Phase half wave
180
o
conduction
T
VJ
=45
t=10ms (50Hz), sine
V
R
=0
a.c.50H
Z
;r.m.s.;1 min
Values
100
1200
7200
3000
-40 to +125
-40 to +125
3±15%
3±15%
150
500
Units
A
A
A
2
s
V
Nm
Nm
A/μs
V/μs
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M5)
T
VJ
=T
VJM
, V
D
=1/2V
DRM
,I
G
=100mA
d
iG
/d
t
=0.1A/μs
T
J
=T
VJM
,V
D
=2/3V
DRM
,linear voltage
rise
Electrical and Thermal Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
GT
I
GT
Rth(j-c)
Rth(c-s)
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Thermal Impedance, max.
Thermal Impedance, max.
Conditions
T=25℃ I
T
=100A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
Junction to Case
Case to Heatsink
Values
Min. Typ. Max.
1.25
20
3
150
0.26
0.10
Units
V
mA
V
mA
℃/W
℃/W
Document Number: S-M0057
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT100DT18L1
Performance Curves
300
W
240
Three phase
200
A
160
Three phase
180
120
120
80
60
P
vtot
0
0 I
D
20
40
60
80
A 100
40
I
D
0
0 Tc
50
100
150
Fig1. Power dissipation
0.20
℃/
W
2000
A
Fig2. Forward Current Derating Curve
50HZ
Z
th(j-
C
)
0.10
1000
Per one element
0
0.001 t 0.01
0.1
1.0
10
S 100
Single phase half wave
Tj=25
start
0
1
10
cycles
100
Fig3. Transient thermal impedance
1000
A
max
.
150
W
120
Fig4. Max Non-Repetitive Forward Surge
Current
90
100
60
30
I
F
10
0.5 V
F
1.0
1.5
2.0
V
2.5
Tj=25
P
TAV
0
0 I
D
20
40
60
80
A 100
Fig5. Forward Characteristics
Document Number: S-M0057
Rev.1.0, May.31, 2013
3
Fig6. SCR Power dissipation
www.apt-semi.com
MT100DT18L1
200
A
160
0.50
℃/
W
120
0.25
80
Z
th(j-
C
)
40
I
TAVM
0
0 Tc
50
100
150
0
0.001 t 0.01
0.1
1.0
10
S 100
Fig7. SCR Forward Current Derating Curve
1000
A
max. .
max
Fig8. SCR Transient thermal impedance
100
V
Pe
ak
Av
er
ag
e
G
Po
we
100
1
-10℃
135℃
at
e
r(
10
Po
w
W
)
er
(3
W
)
I
T
10
0.5 V
TM
1.0
1.5
2.0
Tj=25℃
V
G
2.5
0.1
10
1
I
G
25℃
Maximum Gate Non-Trigger Voltage
V
10
2
10
3
mA 10
4
Fig9. SCR Forward Characteristics
Fig10. Gate trigger Characteristics
Document Number: S-M0057
Rev.1.0, May.31, 2013
www.apt-semi.com
4
Peak Gate Current (3A)
10
Peak Forward Gate Voltage (10V)
G
at
e
MT100DT18L1
Package Outline Information
CASE: L1
Dimensions in mm
Document Number: S-M0057
Rev.1.0, May.31, 2013
www.apt-semi.com
5
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