MT110C18T1
Thyristor Module
V
RRM
/ V
DRM
800 to 1800V
I
TAV
110A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT110C08T1
MT110C12T1
MT110C16T1
MT110C18T1
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
110
2250
1900
25000
18000
3000
-40 to 130
-40 to 125
3±15%
5±15%
150
1000
50
100
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Document Number: S-M0037
Rev.1.0, May.31, 2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
Values
0.28/0.14
0.2/0.1
Units
℃/W
℃/W
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1
MT110C18T1
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=300A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.65
20
0.9
2
3
150
0.25
6
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
300
150
1
100
600
250
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT110C18T1
Performance Curves
200
W
rec.120
sin.180
DC
rec.60
rec.30
200
A
160
DC
150
120
sin.180
rec.120
rec.60
100
80
50
40
P
TAV
0
0 I
TAV
50
100
A 150
I
TAVM
0
0 Tc
50
100
℃
130
rec.30
Fig1. Power dissipation
0.50
℃/
W
Z
th(j-
S
)
2500
A
Fig2.Forward Current Derating Curve
50HZ
0.25
Z
th(j-
C
)
1250
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
300
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
200
max
.
100
I
T
0
0 V
TM
0.5
1.0
25℃
- - -125℃
1.5
V
2.0
Fig5. Forward Characteristics
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT110C18T1
100
V
20V;20
Ω
10
V
GT
∧
1/2·MT110C18T1
1
T
vj
V
GD125
℃
I
GD125
℃
0.001 I
G
0.01
-40℃
25℃
125℃
PG(tp)
V
G
0.1
I
GT
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
Dimensions in mm
Document Number: S-M0037
Rev.1.0, May.31, 2013
www.apt-semi.com
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