MT200C18T2
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
200A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT200C08T2
MT200C12T2
MT200C16T2
MT200C18T2
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M6)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
200
5500
5000
151000
125000
3000
-40 to 130
-40 to 125
3±15%
5±15%
200
1000
50
165
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Conditions
Cont.;per thyristor / per module
per thyristor / per module
Values
0.16/0.08
0.1/0.05
Units
℃/W
℃/W
Document Number: S-M0040
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT200C18T2
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=620A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.7
40
0.85
1.5
3
200
0.25
10
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
300
150
1
100
1000
400
Document Number: S-M0040
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT200C18T2
Performance Curves
300
W
sin.180
rec.120
rec.60
rec.30
300
A
240
DC
DC
200
180
sin.180
rec.120
100
120
rec.60
rec.30
60
P
TAV
0
0 I
TAV
50
100
150
A 200
I
TAVM
0
0 Tc
50
100
℃
130
Fig1. Power dissipation
0.30
℃/
W
Z
th(j-
S
)
6000
A
Fig2.Forward Current Derating Curve
50HZ
0.1
Z
th(j-
C
)
3000
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
900
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
600
max
.
300
I
T
0
0 V
TM
0.5
1.0
1.5
25℃
- - -125℃
V
2.0
Fig5. Forward Characteristics
Document Number: S-M0040
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT200C18T2
100
V
20V;20
Ω
10
1/2·MT200C18T2
V
GT
1
-40℃
∧
PG(tp)
T
vj
25℃
V
G
0.1
0.001 I
G
V
GD125
℃
I
GD125
℃
0.01
125℃
I
GT
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T2
Dimensions in mm
Document Number: S-M0040
Rev.1.0, May.31, 2013
www.apt-semi.com
4
电子工程世界
