MT200DT18L2
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Features
Circuit
G
R2
800 to 1800V
200Amp
Blocking voltage:800 to 1800V
Three Phase Bridge and a Thyristor
Low Forward Voltage
-
Applications
R S T
+
Inverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
UL recognized applied for file no. E360040
Module Type
TYPE
MT200DT08L2
MT200DT12L2
MT200DT16L2
MT200DT18T2
V
RRM
/ V
DRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Mt
Ms
Weight
Item
Conditions
Tc=96℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
200
1900
18050
3000
-40 to +150
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Module（Approximately）
2±15%
5±15%
5±15%
320
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heat sink
Values
0.12
0.06
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V
FM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=200A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.35
≤2
≤10
Units
V
mA
mA
I
RRM
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT200DT18L2
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Mt
Ms
di/dt
dv/dt
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Item
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Conditions
Tc=93℃, Single Phase half wave
180
o
conduction
TVJ=45
℃
t=10ms (50Hz), sine
VR=0
a.c.50HZ;r.m.s.;1 min
Values
200
1900
18050
3000
-40 to +125
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/μs
V/μs
To terminals(M4)
To terminals(M6)
To heatsink(M6)
T
VJ
=T
VJM
, V
D
=1/2V
DRM
,I
G
=100mA
d
iG
/d
t
=0.1A/μs
T
J
=T
VJM
,V
D
=2/3V
DRM
,linear voltage
rise
2±15%
5±15%
5±15%
200
500
Electrical and Thermal Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
GT
I
GT
Rth(j-c)
Rth(c-s)
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Thermal Impedance, max.
Thermal Impedance, max.
Conditions
T=25℃ I
T
=200A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
Junction to Case
Case to Heatsink
Values
Min. Typ. Max.
1.40
100
3
150
0.14
0.06
Units
V
mA
V
mA
℃/W
℃/W
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT200DT18L2
Performance Curves
550
500
W
400
150
Three phase
250
A
200
Three phase
300
200
100
100
P
vtot
0
0 I
D
40
80
120
160
A
200
50
I
D
0
0 Tc
50
100
℃
150
Fig1. Power dissipation
0.20
℃/
W
2500
A
2000
Fig2. Forward Current Derating Curve
50HZ
Z
th(j-
C
)
0.10
1500
Per one element
1000
500
Single phase half wave
Tj=25
℃
start
0.001 t 0.01
0.1
1.0
10
S 100
0
1
10
cycles
100
0
Fig3. Transient thermal impedance
1000
A
max
.
250
W
200
Fig4. Max Non-Repetitive Forward Surge
Current
150
100
100
50
I
F
10
0.5 V
F
1.0
1.5
2.0
V
2.5
Tj=25
℃
P
TAV
0
0 I
D
40
80
120
160
A
200
Fig5. Forward Characteristics
Document Number: S-M0066
Rev.1.0, May.31, 2013
3
Fig6. SCR Power dissipation
www.apt-semi.com
MT200DT18L2
250
A
200
Z
th(j-
C
)
150
0.10
100
0.20
℃/
W
50
I
TAVM
0
0 Tc
50
100
℃
150
0
0.001 t 0.01
0.1
1.0
10
S 100
Fig7. SCR Forward Current Derating Curve
1000
A
10
2
V
Fig8. SCR Transient thermal impedance
max. .
max
Peak Forward Gate Voltage (10V)
Av
e
ra
ge
G
G
at
e
100
10
0
-10℃
135℃
at
e
Po
Po
we
r
we
r
(1
0W
(3
W
)
)
I
T
10
0.5 V
TM
1.0
1.5
2.0
Tj=25℃
V
G
2.5
0.1
10
1
I
G
25℃
Maximum Gate Non-Trigger Voltage
V
10
2
10
3
mA 10
4
Fig9. SCR Forward Characteristics
Fig10. Gate trigger Characteristics
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
4
Peak Gate Current (3A)
10
1
Pe
ak
MT200DT18L2
Package Outline Information
CASE: L2
Dimensions in mm
Document Number: S-M0066
Rev.1.0, May.31, 2013
www.apt-semi.com
5
电子工程世界
