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MT25C18T1

Thyristor Module

厂商名称:爱普特半导体(APTSEMI)

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MT25C18T1
Thyristor Module
V
RRM
/ V
DRM
800 to 1800V
I
TAV
25A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT25C08T1
MT25C12T1
MT25C16T1
MT25C18T1
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
25
550
480
1500
1150
3000
-40 to 125
-40 to 125
3±15%
5±15%
150
1000
50
100
Units
A
A
A2s
V
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Document Number: S-M0033
Rev.1.0, May.31, 2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
1
Values
0.9/0.45
0.2/0.1
Units
℃/W
℃/W
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MT25C18T1
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=75A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.8
10
0.9
12
2.5
150
0.25
5
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
250
100
1
80
400
200
Document Number: S-M0033
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT25C18T1
Performance Curves
75
W
sin.180
rec.120
DC
50
A
40
DC
50
rec.30
rec.60
30
sin.180
20
25
10
P
TAV
0
0 I
TAV
10
20
30
A
40
I
TAVM
0
rec.120
rec.60
rec.30
0 Tc
50
100
130
Fig1. Power dissipation
1.2
℃/
W
Z
th(j-
S
)
1000
A
Fig2.Forward Current Derating Curve
50HZ
0.8
Z
th(j-
C
)
500
0.4
0
0
0.001 t 0.01
0.1
1
10
S 100
10
100
ms 1000
Fig3. Transient thermal impedance
100
A
75
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
50
max
.
25
I
T
0
0 V
TM
0.5
1.0
1.5
2.0
V
2.5
25℃
- - -125℃
Fig5. Forward Characteristics
Document Number: S-M0033
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT25C18T1
100
V
20V;20
10
V
GT
1/2·MT25C18T1
1
T
vj
V
GD125
I
GD125
0.001 I
G
0.01
-40℃
25℃
125℃
PG(tp)
V
G
0.1
I
GT
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
Dimensions in mm
Document Number: S-M0033
Rev.1.0, May.31, 2013
www.apt-semi.com
4
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