MT275C18T3
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
275A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Simple Mounting
Module Type
TYPE
MT275C08T3
MT275C12T3
MT275C16T3
MT275C18T3
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
di/dt
dv/dt
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
275
8000
320000
2500
-40 to 125
-40 to 125
150
1000
Units
A
A
A
2
s
V
℃
℃
A/us
V/us
Weight
Module(Approximately)
600
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Conditions
Cont.;per module
per module
Values
0.13
0.03
Units
℃/W
℃/W
Document Number: S-M0041
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT275C18T3
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
P
GM
I
GM
V
GT
I
GT
I
L
I
H
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
400
200
Conditions
T=25℃ I
TM
=750A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Min.
Values
Typ.
Max.
1.6
30
Units
V
mA
W
A
12
3
2
150
V
mA
mA
mA
Performance Curves
400
W
300
rec.180
sin.180
rec.120
rec.90
rec.60
cont
1000
A
800
600
Typ
.
200
rec.30
400
100
200
P
TAV
0
0 I
TAV
100
200
A 300
Max
I
T
0 V
TM
0.5
1.0
25℃
- - -125℃
1.5
V
2.0
Fig1. Power dissipation
0.2
℃/
W
8000
A
Fig2.Forward Characteristics
50HZ
0.1
Z
th(j-
C
)
4000
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
Document Number: S-M0041
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT275C18T3
100
V
1/2·MT275C18T3
10
1
V
G
0.1
0.001 I
G
0.01
0.1
1
10
A 100
Fig5. Gate trigger Characteristics
Package Outline Information
CASE: T3
Dimensions in mm
Document Number: S-M0041
Rev.1.0, May.31, 2013
www.apt-semi.com
3
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