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MT330C12T4

Thyristor Modules

厂商名称:爱普特半导体(APTSEMI)

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MT330C18T4
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
330A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Simple Mounting
Module Type
TYPE
MT330C08T4
MT330C12T4
MT330C16T4
MT330C18T4
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
di/dt
dv/dt
Weight
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Module(Approximately)
Conditions
Sine 180
o
;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
Values
330
9000
450000
2500
-40 to 125
-40 to 125
150
1000
865
Units
A
A
A
2
s
V
A/us
V/us
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Conditions
Cont.;per module
Per module
Values
0.12
0.03
Units
℃/W
℃/W
Document Number: S-M0042
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT330C18T4
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
P
GM
I
GM
V
GT
I
GT
I
L
I
H
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , R
G
= 33
T
VJ
=25℃ , V
D
=6V
400
200
Conditions
T=25℃ I
TM
=900A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Min.
Values
Typ.
Max.
1.6
30
10
2
2
150
Units
V
mA
W
A
V
mA
mA
mA
Performance Curves
500
W
rec.180
0.20
℃/W
400
rec.120
rec.90
rec.60
sin.180
Z
th(j-
S
)
300
rec.30
cont.
Z
th(j-
C
)
0.10
200
100
P
TAV
0 I
T
100
200
A
300
0
0.001 t 0.01
0.1
1
10
S 100
Fig1. Power dissipation
Fig2. Transient thermal impedance
A
900
9000
A
50HZ
600
Typ
.
4500
max
.
300
25℃
- - -125℃
0 V
TM
0.5
1.0
1.5 V
2.0
0
10
100
ms
1000
I
T
0
Fig3. Forward Characteristics
Fig4. Max Non-Repetitive Forward Surge
Current
www.apt-semi.com
2
Document Number: S-M0042
Rev.1.0, May.31, 2013
MT330C18T4
100
V
1/2·MT330C18T4
10
1
V
G
0.1
0.001 I
G
0.01
0.1
1
10
A
100
Fig5. Gate trigger Characteristics
Package Outline Information
CASE: T4
Dimensions in mm
Document Number: S-M0042
Rev.1.0, May.31, 2013
www.apt-semi.com
3
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