MT40C18T1
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
40Amp
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT40C08T1
MT40C12T1
MT40C16T1
MT40C18T1
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
40
1000
850
5000
3600
3000
-40 to 125
-40 to 125
3±15%
5±15%
150
1000
50
100
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
DocumentNumber: S-M0034
Rev.1.0, May.31, 2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
Values
0.65/0.33
0.2/0.1
Units
℃/W
℃/W
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1
MT40C18T1
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=200A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.95
15
1.0
4.5
2.5
150
0.25
6
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
300
150
1
80
600
250
DocumentNumber: S-M0034
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT40C18T1
Performance Curves
100
W
75
rec.120
rec.60
sin.180
DC
60
A
48
sin.180
DC
36
50
rec.30
rec.120
rec.60
24
rec.30
25
P
TAV
0
0 I
TAV
10
20
30
40
50
A 60
12
I
TAVM
0
0 Tc
50
100
℃
130
Fig1. Power dissipation
1.0
℃/
W
Z
th(j-
S
)
1000
A
Fig2.Forward Current Derating Curve
50HZ
Z
th(j-
C
)
0.5
500
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
250
A
200
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
150
max
.
100
25
I
T
0
0 V
TM
0.5
1.0
1.5
25℃
- - -125℃
2.0
V
2.5
Fig5. Forward Characteristics
DocumentNumber: S-M0034
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT40C18T1
100
V
20V;20
Ω
10
1/2·
MT40C18T1
V
GT
1
25℃
-40℃
∧
PG(tp)
T
vj
125℃
V
GD125
℃
I
GD125
℃
0.001 I
G
0.01
I
GT
V
G
0.1
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
Dimensions in mm
DocumentNumber: S-M0034
Rev.1.0, May.31, 2013
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