MT90C18T1
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
90Amp
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT90C08T1
MT90C12T1
MT90C16T1
MT90C18T1
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
90
2000
1750
20000
15000
3000
-40 to 130
-40 to 125
3±15%
5±15%
150
1000
50
100
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Document Number: S-M0036
Rev.1.0, May.31, 2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
Values
0.28/0.14
0.2/0.1
Units
℃/W
℃/W
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1
MT90C18T1
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Conditions
T=25℃ I
TM
=300A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
For power-loss calculations only (T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃, I
G
=1A, di
G
/dt=1A/us
T
VJ
=T
VJM
Min.
Values
Typ.
Max.
1.65
20
0.9
2
3
150
0.25
6
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
300
150
1
100
600
250
Document Number: S-M0036
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT90C18T1
Performance Curves
140
125
W
100
rec.30
rec.60
rec.120
sin.180
200
A
160
DC
DC
120
sin.180
75
80
rec.120
rec.60
50
25
P
TAV
0
0 I
TAV
20
40
60
80
100 A 120
40
I
TAVM
0
rec.30
0 Tc
50
100
℃
130
Fig1. Power dissipation
0.50
℃/
W
Z
th(j-
S
)
2000
A
Fig2.Forward Current Derating Curve
50HZ
0.25
Z
th(j-
C
)
1000
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
300
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
200
max
.
100
I
T
0
0 V
TM
0.5
1.0
25℃
- - -125℃
1.5
V
2.0
Fig5. Forward Characteristics
Document Number: S-M0036
Rev.1.0, May.31, 2013
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3
MT90C18T1
100
V
20V;20
Ω
10
V
GT
∧
1/2·MT90C18T1
1
T
vj
V
GD125
℃
I
GD125
℃
0.001 I
G
0.01
-40℃
25℃
125℃
PG(tp)
V
G
0.1
I
GT
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
Dimensions in mm
Document Number: S-M0036
Rev.1.0, May.31, 2013
www.apt-semi.com
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