MXDLN14TP
SiGe Low Noise Amplifier
for Dual-Band GNSS Applications
Rev 1.2
ED
PPROV
A
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Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
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Page 1 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
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MXDLN14TP Low Noise Amplifier for GNSS
General Description
MXDLN14TP high gain, Dual-Band low noise
amplifier (LNA) is dedicated to GPS, GLONASS
Galileo and Beidou standards. This product has
an extremely low noise figure of 0.5dB, 18.2dB
gain and excellent linearity.
MXDLN14TP works under a 1.6V to 3.6V single
power supply while consumes 3.3 mA current, in
power down (PD) mode, the power consumption
will be reduced to less than 1uA.
MXDLN14TP uses a small 1.1mm x 0.7mm x
0.45mm LGA 6-pin package.
Features
High Gain:
18.0dB
18.2dB
17.5dB
@ 1176.45MHz
@ 1227.6MHz
@ 1575.42MHz
Low noise figure:
0.60dB
0.60dB
0.50dB
@ 1176.45MHz
@ 1227.6MHz
@ 1575.42MHz
Applications
Automotive Navigation
Personal Navigation Device (PND)
Cell Phone with GPS
MID/PAD with GPS
Low operation current 3.3mA & PD current
less than 1uA
Single supply voltage range 1.6V to 3.6V
Small package 1.1mmx0.7mmx0.45mm
,
MSL1
Low cost BOM
Lead-Free and RoHS-Compliant
Pin Configuration/Application Diagram (Top view)
GND
4
3
RFOUT
VDD
RF output
MXDLN14TP
RF input
L1
RFIN
5
2
VDD
1 nF
Enable
EN
6
1
GND
Figure 1.MXDLN14TP application circuit
Page 2 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
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MXDLN14TP Low Noise Amplifier for GNSS
Table 1.
Component
L1
Matching Band
1160-1300MHz
Vendor
Murata
various
Murata
various
Type
Wired inductor, high Q
Ceramic inductor, low Q
Wired inductor, high Q
Ceramic inductor, low Q
Part Number & value
LQW15AN12N, 12nH
11nH
LQW15AN6N8, 6.8nH
6.2nH
L1
1550-1615MHz
Absolute Maximum Ratings
Table 2.
Parameters
Power supply
Other Pin to GND
Maximum RF Input Power
Operation Temperature Range
Junction Temperature
Storage temperature Range
Lead Temperature (soldering)
Soldering Temperature (reflow)
Human Body Mode ESD
Machine Mode ESD
Charge Device Mode ESD
Range
-0.3 ~ 4.0
-0.3~VDD+0.3
25
-40~90
150
-65~160
260
260
-2000~+2000
-150~+150
-1000~+1000
Units
V
V
dBm
℃
℃
℃
℃
℃
V
V
V
Specifications
DC Characteristics
T
A
=-40~+90℃, Typically T
A
=25℃ VDD=2.8V, unless otherwise noted
Table 3.
Parameters
Supply Voltage
Supply Current
EN Input High
EN Input Low
Condition
VDD=1.6~3.6V
EN=High,
EN=Low
Min
1.6
-
0
1.0
0
Typ
2.8
3.3
0.01
1.8
0
Max
3.6
-
1
VDD
0.3
Units
V
mA
uA
V
V
Page 3 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
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MXDLN14TP Low Noise Amplifier for GNSS
AC Characteristics
T
A
=-40~+90℃, typically T
A
=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 4.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Min
1160
-
-
-
-
-
1.5
-13
-7
-2
Typ
1176.45
18.0
0.6
-9
-9
-29
-
-9.5
-2
3
Max
1215
-
1.0
-5
-5
-24
-
-
-
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1
Note1
Note1
Note2
1176MHz
Note3
Note4
T
A
=-40~+90℃, typically T
A
=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 5.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Min
1160
-
-
-
-
-
1.5
-16
-9
-4
Typ
1176.45
17.8
0.6
-9
-9
-29
-
-12.5
-4
1
Max
1215
-
1.0
-5
-5
-24
-
-
-
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1
Note1
Note1
Note2
1176MHz
Note3
Note4
Note1:
sweep power -30dBm, 1176.45MHz
Note2:
frequency range 500MHz-5GHz
Note3:
f1 = 1175.45 MHz, f2 = 1176.45 MHz, -25dBm
Note4:
f1=1800MHz, f2=2400MHz, pin= -20dBm at f1, pin= -65dBm at f2
Page 4 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXDLN14TP Low Noise Amplifier for GNSS
AC Characteristics
T
A
=-40~+90℃, typically T
A
=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 6.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Min
1215
-
-
-
-
-
1.5
-13
-7
-2
Typ
1227.6
18.2
0.6
-10
-10
-28
-
-9.5
-2
3
Max
1300
-
1.0
-5
-5
-23
-
-
-
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1
Note1
Note1
Note2
1227MHz
Note3
Note4
T
A
=-40~+90℃, typically T
A
=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 7.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Min
1215
-
-
-
-
-
1.5
-16
-9
-4
Typ
1227.6
18.0
0.6
-10
-10
-28
-
-12.5
-4
1
Max
1300
-
1.0
-5
-5
-23
-
-
-
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1
Note1
Note1
Note2
1227MHz
Note3
Note4
Note1:
sweep power -30dBm, 1227.6MHz
Note2:
frequency range 500MHz-5GHz
Note3:
f1 = 1226.6 MHz, f2 = 1227.6 MHz, -25dBm
Note4:
f1=1800MHz, f2=2400MHz, pin= -20dBm at f1, pin= -65dBm at f2
Page 5 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential