NJ10N65 POWER MOSFET
10A 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ10N65 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.
1
FEATURES
* V
DS
= 650V
* I
D
=
10A
* R
DS(ON)
=0.86Ω@V
GS
= 10V.
*
Low gate charge ( typical 44 nC)
*
Low Crss ( typical 18 pF)
*
Fast switching
*
100% avalanche tested
*
Improved dv/dt capability
TO-220
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ10N65-LI
NJ10N65-BL
NJ10N65F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ10N65 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
RATINGS
650
± 30
10
10
38
700
15.6
4.5
156
50
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
W
P
D
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25 Starting T
J
= 25°C
4. I
SD
9.5A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
Junction to Case
JC
SYMBOL
JA
RATING
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
NJ10N65 POWER MOSFET
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
650
V
1
μA
100 nA
-100 nA
V/°C
V
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250 A
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=325V, I
D
=10A, R
G
=25
(Note1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=520V, I
D
=10A, V
GS
=10V
Gate-Source Charge
Q
GS
(Note1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=10A,
dI
F
/dt=100A/μs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
V
GS
=0V, I
D
= 250 A
V
DS
=650V, V
GS
=0V
V
GS
=30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
BV
DSS
/ T
J
I
D
=250 μA, Referenced to 25°C
0.7
2.0
4.0
0.72 0.86
1570 2040
166 215
18
24
23
55
69 150
144 300
77 165
44
57
6.7
18.5
1.4
10
38
420
4.2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
NJ10N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ10N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
I
D(t)
10V
t
p
t
p
Time
V
DD
D.U.T.
V
DS(t)
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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