NJ10N80 POWER MOSFET
10A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ10N80 uses advanced proprietary, planar stripe,
DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device
is suitable for use as a load switch or in PWM applications.
1
FEATURES
* V
DS
=
800V
* I
D
=
10A
* R
DS(ON)
=1.1Ω@V
GS
= 10V.
*
Ultra Low Gate Charge ( Typical 45nC )
*
Low Reverse Transfer Capacitance ( CRSS = Typical 15pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-220
1
TO-220F
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ10N80-LI
NJ10N80-BL
NJ10N80F-LI
Package
TO-220
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Note:
Pin Assignment: G: Gate
D: Drain
S: Source
NJ10N80 POWER MOSFET
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
C
= 25° )
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
Power Dissipation
TO-220F
TO-220
Linear Derating Factor above T
C
= 25°
TO-220F
P
D
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
TO-220F1
63
ABSOLUTE MAXIMUM RATINGS
(T
C
=25° , unless otherwise specified)
RATINGS
800
±30
10
40
10
920
24
4.0
156
63
1.25
0.504
W/°
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
Junction Temperature
T
J
150
°
Storage Temperature
T
STG
-55 ~ +150
°
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=17.3mH, I
AS
=10A, V
DD
=50V, R
G
=25 , Starting T
J
=25°C
4. I
SD
10 A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
=25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
TO-220
TO-220
Junction to Case
TO-220F
JC
SYMBOL
JA
RATINGS
62.5
UNIT
° /W
0.8
° /W
1.98
NJ10N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25° , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
800
10
100
±100
0.98
3.0
0.9
5.0
1.1
V
μA
nA
V/°
V
Gate-Body Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5.0A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=10.0A,
R
G
=25 (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=10.0A (Note 1,2)
Gate Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=10.0 A,V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0V, dI
F
/dt = 100 A/μs,
I
S
= 10.0A (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
2. Independent of operating temperature.
V
GS
=0 V, I
D
=250 μA
V
DS
=800V, V
GS
=0 V
I
DSS
V
DS
=640V, T
C
=125°C
I
GSS
V
DS
=0 V, V
GS
= ±30 V
BV
DSS
/ T
J
I
D
=250μA, Referenced to 25°C
2150 2800
180 230
15
20
50
130
90
80
45
13.5
17
110
270
190
170
58
pF
pF
pF
ns
nC
1.4
10.0
V
A
40.0
730
10.9
ns
nC
NJ10N80 POWER MOSFET
TEST CIRCUIT
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
NJ10N80 POWER MOSFET
TEST CIRCUIT(Cont.)
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
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