NJ4N60 POWER MOSFET
4.0A 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The
NJ4N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
FEATURES
* V
DS
= 600V
* I
D
=
4.0A
* R
DS(ON)
=2.5Ω@V
GS
= 10V.
* Ultra Low gate charge (typical
15nC)
* Low reverse transfer capacitance (C
RSS
= typical
8.0
pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ4N60-LI
NJ4N60-BL
NJ4N60F-LI
NJ4N60A-LI
NJ4N60D-TR
NJ4N60D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ4N60 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25° , unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous
Drain Current
Pulsed (Note 2)
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
RATINGS
600
±30
4.4
4.0
16
UNIT
V
V
A
A
A
Avalanche Energy
Single Pulsed
4N60-E
(Note 3)
E
AS
200
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
TO-251
TO-252
E
AR
dv/dt
10.6
4.5
106
36
50
50
mJ
V/ns
P
D
W
Junction Temperature
T
J
+150
°
Operating Temperature
T
OPR
-55 ~ +150
°
Storage Temperature
T
STG
-55 ~ +150
°
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25 , Starting T
J
= 25°C
4. I
SD
4.4A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
RATINGS
62.5
62.5
110
110
1.18
3.47
2.5
2.5
UNIT
Junction to Ambient
JA
° /W
Junction to Case
Jc
° /W
NJ4N60 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25° , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
600
V
10
A
100 nA
-100 nA
V/°
4.0
2.5
2.5
2.5
2.5
2.5
670
90
11
35
100
100
130
100
100
60
120
120
220
120
120
20
V
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A
Static Drain-Source On-State
4N60
Resistance
4N60-E
R
DS(ON)
4N60-N
V
GS
= 10 V, I
D
= 2.2A
4N60-Q
4N60-S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
4N60
4N60-E
Turn-On Rise Time
4N60-N
t
R
4N60-Q
4N60-S
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25 (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
4N60
4N60-E
Turn-Off Fall Time
4N60-N
t
F
4N60-Q
4N60-S
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
V
GS
= 0V, I
D
= 250 A
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
I
GSS
V
GS
= -30V, V
DS
= 0V
BV
DSS
/ T
J
I
D
=250 A,Referenced to 25°C
0.6
2.0
2.2
2.2
2.2
2.2
2.2
520
70
8
13
70
60
100
45
40
25
100
70
180
35
70
15
3.4
7.1
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
1.4
4.4
17.6
250
1.5
NJ4N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ4N60 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
电子工程世界
模拟电子
