NJ4N80 POWER MOSFET
4.0A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ4N80 is a N-channel mode power MOSFET using
advanced technology to provide costomers planar stripe and DMOS
technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
1
TO-220
FEATURES
* V
DS
=
800V
* I
D
=
4.0A
* R
DS(ON)
=3Ω@V
GS
= 10V.
*
High switching speed
*
Improved dv/dt capability
*
100% avalanche tested
1
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ4N80-LI
NJ4N80-BL
NJ4N80F-LI
NJ4N80A-LI
NJ4N80D-TR
NJ4N80D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ4N80 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220
TO-220F
Power Dissipation
TO-251
TO-252
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
E
AR
dv/dt
RATINGS
800
±30
4.0
16
460
13
4.0
106
36
50
UNIT
V
V
A
A
mJ
mJ
V/ns
W
W
W
P
D
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=57mH, I
AS
=4A, V
DD
= 50V, R
G
=25 , Starting T
J
=25°C
4. I
SD
4A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
RATINGS
62.5
110
110
1.18
3.47
2.5
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
JA
Junction to Case
JC
NJ4N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
MIN
800
950
TYP
MAX
UNIT
BV
DSS
V
GS
=0V, I
D
=250μA
BV
DSS
/ T
J
I
D
=250 A,Referenced to 25°C
V
DS
=800V, V
GS
=0V
I
DSS
V
DS
=640V, T
C
=125°C
V
DS
=0V ,V
GS
=30V
I
GSS
V
DS
=0V ,V
GS
=-30V
V
mV/°C
10
μA
100
μA
100
nA
-100
nA
5.0
3.0
880
100
12
25
V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=4A (Note 1,2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=4A,
R
G
=25 (Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=4A,
dI
F
/dt=100A/ s (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
3.0
2.3
680
75
8.6
19
4.2
9.1
16
45
35
35
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
C
40
100
80
80
4
16
1.4
575
3.65
NJ4N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ4N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
V
GS
Switching Waveforms
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
电子工程世界
模拟电子
