NJ5N80 POWER MOSFET
5.0A 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ5N80 is a N-channel enhancement mode power MOSFET.
It use advanced technology to provide avalanche rugged technology
and low gate charge.
It can be applied in high current, high speed switching, switch mode
power supplies (SMPS), consumer and industrial lighting, DC-AC
inverters for welding equipment and uninterruptible power supply(UPS).
FEATURES
* V
DS
=
800V
* I
D
=
5.0A
*
RDS(ON): 2.0
ohm(TYP.)
*
Avalanche rugged technology
*
Low input capacitance
*
Low gate charge
*
Application oriented characterization
SYMBOL
ORDERING INFORMATION
Ordering Number
NJ5N80-LI
NJ5N80-BL
NJ5N80F-LI
NJ5N80A-LI
NJ5N80D-TR
NJ5N80D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ5N80 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
GS
=0
V
DS
800
V
Gate-Source Voltage
V
GS
±30
V
Drain-Gate Voltage
R
GS
=20k
V
DGR
800
V
Continuous
I
D
5.5
A
Drain Current (Continuous)
20
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
320
mJ
TO-220
125
W
Power Dissipation
P
D
40
TO-220F
TO-220
1
Derating Factor
W/°C
TO-220F
0.32
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting T
J
=25°C, I
D
=I
AR
, V
DD
=50V
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F
SYMBOL
JA
JC
RATINGS
62.5
1
3.12
UNIT
°C/W
°C/W
NJ5N80 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
I
D
=250μA, V
GS
=0V
V
DS
=800V, V
GS
=-0V
V
GS
=+30V
V
GS
=-30V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=2.5A
V
GS
=10V, I
D
=2.5A, T
C
=100°C
V
DS
>I
D(ON)
R
DS(ON)
max,V
GS
=10V
MIN
800
25
+100
-100
3
2.0
5
1190 1450
165
200
70
85
75
9
33
50
85
120
30
95
5
2.5
4
TYP
MAX UNIT
V
μA
nA
nA
V
V
GS(TH)
R
DS(ON)
On State Drain Current
I
D(ON)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=500V, I
D
=6A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=400V, I
D
=2.5A, R
G
=50
V
GS
=10V (Note 1, 2)
Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
V
DD
=640V, I
D
=5.5A, R
G
=50
V
GS
=10V (Note 1, 2)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=5.5A, V
GS
=0V
Reverse Recovery Time
t
rr
I
SD
=5.5A,dI/dt=100A/μs,
Reverse Recovery Charge
Q
RR
V
DD
=80V,T
J
=150°C (Note 1)
Reverse Recovery Current
I
RRM
Source-Drain Current
I
SD
Source-Drain Current (Pulsed) (Note 1)
I
SDM
Notes: 1. Pulsed: Pulse duration=300μs, duty cycle 1.5%.
2. Essentially independent of operating temperature
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
A
A
A
65
105
150
40
2
700
7.7
22
5.5
20
NJ5N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ5N80 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
V
GS
Switching Waveforms
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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