PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=6mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=9mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06N03
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
D S
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S T G
E
AS
R
θ
J C
R
θ
J A
Li mi t
25
+20
60
280
6 2 .5
3 7 .5
-5 5 to + 1 5 0
180
2 .0
50
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1
PJD06N03
ELECTRICALCHARACTERISTICS
P a ra me te r
S ta ti c
D r a i n- S o ur c e B r e a k d o w n Vo l t a g e
G a t e Thr e s ho l d Vo l t a g e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e
Ze r o G a t e Vo l t a g e D r a i n C ur r e nt
Gate Body Leakage
Forward Transconductance
Dynamic
V
D S
= 1 5 V , I
D
= 1 5 A , V
G S
= 5 V
To t a l G a t e C h a r g e
Q
g
-
G a t e - S o ur c e C ha r g e
G a t e - D r a i n C ha r g e
Tu r n - O n D e l a y Ti m e
Tu r n - O n R i s e Ti m e
Tu r n - O f f D e l a y Ti m e
Tu r n - O f f F a l l Ti m e
In p u t C a p a c i t a n c e
O ut p ut C a p a c i t a nc e
R e v e r s e Tr a n s f e r C a p a c i t a n c e
S o ur c e - D r a i n D i o d e
M a x. D i o d e F o r w a r d C ur r e nt
D i o d e F o rwa rd Vo lta g e
I
s
V
SD
-
I
S
= 3 0 A , V
G S
= 0 V
-
-
-
0 .9
60
1 .2
A
V
Q
g s
Q
g d
T
d ( o n )
t
rr
t
d (o ff)
t
f
C
iss
C
oss
C
rs s
V
D S
=1 5 V, V
G S
=0 V
f=1 .0 MH
Z
V
D D
=15V , R
L
=15
Ω
I
D
=1A , V
G E N
=10V
R
G
=3.6
Ω
V
D S
= 1 5 V , I
D
= 1 5 A
V
G S
=10V
-
-
-
-
-
-
-
-
-
3 8 .2
4 .8
9 .5
11.5
11.0
43
1 7 .5
1750
480
310
-
nC
-
-
16
18
ns
60
25
-
-
-
pF
-
2 1 .8
-
BV
D SS
V
G S (th)
R
D S (o n)
R
D S (o n)
I
D S S
I
G S S
g
fS
V
G S
= 0 V , I
D
= 2 5 0 u A
V
D S
= V
G S
, I
D
= 2 5 0 u A
V
G S
=4.5V, I
D
=30A
V
G S
=10V, I
D
=30A
V
D S
=25V, V
G S
=0V
V
G S
=+2 0 V, V
D S
=0 V
V
D S
= 1 0 V , I
D
= 1 5 A
25
1
-
-
-
-
30
-
-
7 .5
5.0
-
-
-
-
3
9 .0
m
Ω
6.0
1
+100
-
uA
nA
S
V
V
S ym b o l
Te s t C o n d i t i o n
M i n.
Ty p .
M a x.
U ni t s
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
STAD-JUL.19.2006
PAGE . 2
PJD06N03
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
I
D
- Drain-to-Source Current (A)
100
80
V
GS
=10V, 6.0V, 5.0V, 4.5V, 4.0V
80
I
D
- Drain Source Current (A)
V
DS
=10V
3.5V
60
60
40
T
J
=125 C
O
40
3.0V
20
20
T
J
=25 C
O
2.5V
0
T
J
=-55 C
O
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
15
30
R
DS(ON)
- On-Resistance (m
W
)
R
DS(ON)
- On-Resistance (m
W
)
I
D
=30A
12
9
6
3
0
0
10
20
30
40
50
60
70
80
90
I
D
- Drain Current (A)
25
20
15
10
5
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
=4.5V
V
GS
=10V
T
J
=125
O
C
T
J
=25
O
C
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance
(Normalized)
1.4
1.3
V
GS
=10V
I
D
=30A
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Tem perature (
o
C)
FIG.5- On Resistance vs Junction Temperature
STAD-JUL.19.2006
PAGE . 3
PJD06N03
V
GS
- Gate-to-Source Voltage (V)
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
Q
g
- Gate Charge (nC)
Vgs
Qg
V
DS
=15V
I
D
=15A
Vgs(th)
Qsw
Qg(th)
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
29
BV
DSS
- Breakdown Voltage (V)
Fig.7 - Gate Charge
V
th
- G-S Threshold Voltage (NORMALIZED)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
=250uA
I
D
=250uA
28
27
26
-25
0
25
50
75
100
125
150
25
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Tem perature (
o
C)
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
I
S
- Source Current (A)
V
GS
=0V
10
1
T
J
=125
O
C
T
J
=25
O
C
T
J
=-55
O
C
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUL.19.2006
PAGE . 4
电子工程世界
